Datasheet > BD791T

BD791T

更新时间： 2024-01-08 04:11:35

品牌	Logo	应用领域
安森美 - ONSEMI		局域网开关晶体管
页数	文件大小	规格书
6页	105K
描述
4A, 100V, NPN, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, CASE 77-09, 3 PIN

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技术参数
数据手册

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BD791T 技术参数

生命周期：	Transferred	零件包装代码：	TO-225AA
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.31	最大集电极电流 (IC)：	4 A
集电极-发射极最大电压：	100 V	配置：	SINGLE
最小直流电流增益 (hFE)：	5	JEDEC-95代码：	TO-225AA
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	40 MHz
Base Number Matches：	1

BD791T 数据手册

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by BD791/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

. . . designed for low power audio amplifier and low–current, high speed switching

applications.

4 AMPERE

POWER TRANSISTOR

SILICON

•

High Collector–Emitter Sustaining Voltage —

= 100 Vdc (Min)

CEO(sus)

High DC Current Gain @ I = 200 mAdc

100 VOLTS

15 WATTS

= 40–250

Low Collector–Emitter Saturation Voltage —

= 0.5 Vdc (Max) @ I = 500 mAdc

CE(sat)

High Current Gain — Bandwidth Product —

= 40 MHz (Min) @ I = 100 mAdc)

*MAXIMUM RATINGS

Rating

Symbol

Max

100

6.0

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

EBO

CASE 77–09

TO–225AA TYPE

Collector Current — Continuous

— Peak

4.0

8.0

Base Current

1.0

Adc

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.12

Watts

W/ C

Operating and Storage Junction

Temperature Range

T ,T

J stg

–65 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

8.34

C/W

θJC

1.6

1.2

0.8

0.4

8.0

4.0

100

120

140

160

T, TEMPERATURE (

°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁸r Power Transistor Device Data

12 3 4 5 6

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