BD787 − NPN, BD788 − PNP
Complementary Plastic
Silicon Power Transistors
These devices are designed for lower power audio amplifier and
low current, high−speed switching applications.
Features
http://onsemi.com
• Low Collector−Emitter Sustaining Voltage − V
• High Current−Gain − Bandwidth Product −
60 Vdc (Min)
CEO(sus)
4 AMPERES
f = 50 MHz (Min) @ I = 100 mAdc
T
C
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 VOLTS, 15 WATTS
• Collector−Emitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and
4.0 Adc
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter Base Voltage
Symbol
Value
60
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
V
CBO
V
EBO
80
TO−225
CASE 77
STYLE 1
6.0
Collector Current − Continuous
− Peak
I
4.0
8.0
C
3
2
1
Base Current
− Continuous
I
1.0
Adc
B
Total Power Dissipation @ T = 25_C
P
15
0.12
W
C
D
Derate above 25_C
mW/_C
_C
MARKING DIAGRAM
Operating and Storage Junction
Temperature Range
T , T
J
–65 to +150
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
YWW
BD78xG
Thermal Resistance, Junction−to−Case
R
8.34
_C/W
q
JC
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Y
= Year
WW
= Work Week
BD78x = Device Code
x = 7 or 8
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BD787
TO−225
500 Units/Box
500 Units/Box
TO−225
BD787G
(Pb−Free)
BD788
TO−225
500 Units/Box
500 Units/Box
TO−225
BD788G
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
February, 2006 − Rev. 11
BD787/D