Datasheet > BD787/D

BD787/D

更新时间： 2024-11-03 23:35:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	67K
描述
Complementary Plastic Silicon Power Transistors

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BD787/D 数据手册

ON Semiconductort

NPN

BD787

PNP

Complementary Plastic Silicon

Power Transistors

BD788

. . . designed for lower power audio amplifier and low current,

high–speed switching applications.

• Low Collector–Emitter Sustaining Voltage —

4 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

60 Vdc (Min) — BD787, BD788

CEO(sus)

• High Current–Gain — Bandwidth Product —

f = 50 MHz (Min) @ I = 100 mAdc

60 VOLTS

15 WATTS

• Collector–Emitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and

4.0 Adc

MAXIMUM RATINGS

BD787

BD788

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

CEO

CBO

EBO

6.0

Collector Current — Continuous

— Peak

4.0

8.0

Adc

CASE 77–09

TO–225AA TYPE

Base Current

1.0

Adc

Total Power Dissipation @ T = 25°C

Watts

Derate Above 25_C

Operating and Storage Junction

0.12

W/_C

T , T

–65 to +150

stg

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

8.34

_C/W

1.6

1.2

0.8

8.0

4.0

0.4

100

120

140

160

T, TEMPERATURE (°C)

Figure 1. Power Derating

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 9

BD787/D

12 3 4 5 6 7 8

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