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BD78326EFJ-ME2 PDF预览

BD78326EFJ-ME2

更新时间: 2024-11-26 20:52:15
品牌 Logo 应用领域
罗姆 - ROHM 放大器光电二极管商用集成电路
页数 文件大小 规格书
28页 1636K
描述
Audio Amplifier,

BD78326EFJ-ME2 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:VSOP,Reach Compliance Code:compliant
风险等级:5.68商用集成电路类型:AUDIO AMPLIFIER
JESD-30 代码:R-PDSO-G8长度:4.9 mm
信道数量:1功能数量:1
端子数量:8最高工作温度:105 °C
最低工作温度:-40 °C标称输出功率:1.2 W
封装主体材料:PLASTIC/EPOXY封装代码:VSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE
峰值回流温度(摄氏度):NOT SPECIFIED筛选级别:AEC-Q100
座面最大高度:1 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4 V表面贴装:YES
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm
Base Number Matches:1

BD78326EFJ-ME2 数据手册

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Datasheet  
Class-AB Speaker Amplifier Series  
1.2 W  
Monaural Speaker Amplifier for Automotive  
BD783xxEFJ-M Series (Including products under development)  
General Description  
Key Specifications  
BD783xxEFJ-M Series are Class-AB monaural speaker  
amplifiers designed for automotive. Class-AB amplifiers  
have no requirements for care about EMI noise. Adopting  
power package HTSOP-J8 achieves high output power.  
Low quiescent current can reduce battery consumption.  
Shutdown current is also very low (0.1 µA Typ) and pop  
noise level when switching to shutdown is very small, so  
this device is suitable for applications in which the mode  
often changes between “shutdown state” and “active  
state”.  
Output Power  
1.2 W (Typ)  
(VDD = 5 V, RL = 8 Ω, THD+N = 1 %)  
Quiescent Current  
Shutdown Current  
2.5 mA (Typ)  
0.1 µA (Typ)  
Total Harmonic Distortion + Noise  
(RL = 8 Ω, f = 1 kHz)  
Output Noise Voltage  
Voltage Gain  
0.05 % (Typ)(Note 2)  
15 μVRMS (Typ)(Note 2)  
6.0 dB to 26.0 dB (Typ)  
Operating Temperature Range -40 ºC to +105 ºC  
(Note 2) Characteristic of BD78306EFJ-M  
Package  
HTSOP-J8  
W (Typ) x D (Typ) x H (Max)  
4.90 mm x 6.00 mm x 1.00 mm  
Features  
AEC-Q100 Qualified(Note 1)  
Pop Noise Reduction Function  
Shutdown Function  
Protection Functions  
-
-
-
Over Current Protection  
Thermal Shutdown  
Under Voltage Lock Out (UVLO)  
Power Package with Thermal Pad HTSOP-J8  
(Note 1) Grade2  
Applications  
Automotive Instruments  
HTSOP-J8  
Typical Application Circuit  
8
1
2
3
SDB  
BIAS  
INP  
OUTN  
GND  
VDD  
From System  
Control  
C1  
7
6
0.47 µF  
C4  
10 µF  
C2  
Input  
VDD  
Signal  
0.47 µF  
C3  
5
4
OUTP  
INN  
0.47 µF  
Figure 1  
Product structure : Silicon integrated circuit This product has no designed protection against radioactive rays.  
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 14 • 001  
TSZ02201-0C1C0EC00760-1-2  
19.Jul.2019 Rev.001  
1/25  

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