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by BD787/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for lower power audio amplifier and low current, high–speed switching
applications.
4 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
•
•
•
Low Collector–Emitter Sustaining Voltage —
60 Vdc (Min) — BD787, BD788
V
CEO(sus)
High Current–Gain — Bandwidth Product —
= 50 MHz (Min) @ I = 100 mAdc
f
T
C
60 VOLTS
15 WATTS
Collector–Emitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and 4.0 Adc
MAXIMUM RATINGS
BD787
BD788
Rating
Symbol
Unit
Vdc
Vdc
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
60
80
6.0
Collector Current — Continous
— Peak
4.0
8.0
Adc
Adc
I
C
CASE 77–08
TO–225AA TYPE
Base Current
I
1.0
Adc
B
Total Power Dissipation @ T = 25°C
Derate Above 25 C
15
0.12
Watts
W/ C
C
P
D
Operating and Storage Junction
Temperature Range
T , T
–65 to +150
C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
8.34
C/W
θJC
16
12
1.6
1.2
0.8
8.0
4.0
0
0.4
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
REV 7
MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1