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BD678A PDF预览

BD678A

更新时间: 2024-11-03 22:48:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率双极晶体管达林顿晶体管局域网
页数 文件大小 规格书
6页 90K
描述
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

BD678A 技术参数

是否Rohs认证:符合生命周期:End Of Life
零件包装代码:SIP包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.58
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:179149Samacsys Pin Count:3
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:SOT-32 (TO-126)Samacsys Released Date:2015-11-03 12:30:39
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):4 A集电极-发射极最大电压:60 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):750
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP功耗环境最大值:40 W
最大功率耗散 (Abs):40 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):10 MHzVCEsat-Max:2.8 V
Base Number Matches:1

BD678A 数据手册

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BD677/A/679/A/681  
BD678/A/680/A/682  
COMPLEMENTARY SILICON  
POWER DARLINGTON TRANSISTORS  
SGS-THOMSON PREFERRED SALESTYPES  
COMPLEMENTARY PNP - NPN DEVICES  
MONOLITHIC DARLINGTON  
CONFIGURATION  
INTEGRATED ANTIPARALLEL  
COLLECTOR-EMITTER DIODE  
APPLICATION  
LINEAR AND SWITCHING INDUSTRIAL  
EQUIPMENT  
1
2
3
SOT-32  
DESCRIPTION  
The BD677, BD677A, BD679, BD679A and  
BD681 are silicon epitaxial-base NPN power  
transistors in monolithic Darlington configuration  
mounted in Jedec SOT-32 plastic package.  
They are intended for use in medium power linar  
and switching applications  
INTERNAL SCHEMATIC DIAGRAM  
The complementary PNP types are BD678,  
BD678A, BD680, BD680A and  
respectively.  
BD682  
R1 Typ.= 7K Ω  
R2 Typ.= 230 Ω  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN BD677/A  
BD679/A  
BD681  
BD682  
100  
PNP  
BD678/A  
BD680/A  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
60  
60  
80  
V
V
80  
100  
5
V
4
A
ICM  
IB  
Collector Peak Current  
6
0.1  
A
Base Current  
A
Ptot  
Tstg  
Tj  
Total Dissipation at Tc 25 oC  
Storage Temperature  
40  
W
oC  
oC  
-65 to 150  
150  
Max. Operating Junction Temperature  
For PNP types voltage and current values are negative.  
1/6  
September 1997  

BD678A 替代型号

型号 品牌 替代类型 描述 数据表
TIP125 STMICROELECTRONICS

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COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
TIP115 STMICROELECTRONICS

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MJE700G ONSEMI

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