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BD678G PDF预览

BD678G

更新时间: 2024-11-04 04:09:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 59K
描述
Plastic Medium−Power Silicon PNP Darlingtons

BD678G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-225AA包装说明:ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:4 weeks
风险等级:0.93最大集电极电流 (IC):4 A
集电极-发射极最大电压:60 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):750JEDEC-95代码:TO-225AA
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):40 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON

BD678G 数据手册

 浏览型号BD678G的Datasheet PDF文件第2页浏览型号BD678G的Datasheet PDF文件第3页浏览型号BD678G的Datasheet PDF文件第4页 
BD676, BD676A, BD678,  
BD678A, BD680, BD680A,  
BD682, BD682T  
Plastic Medium−Power  
Silicon PNP Darlingtons  
http://onsemi.com  
This series of plastic, medium−power silicon PNP Darlington  
transistors can be used as output devices in complementary  
general−purpose amplifier applications.  
4.0 AMP DARLINGTON  
POWER TRANSISTORS  
PNP SILICON  
Features  
High DC Current Gain −  
45, 60, 80, 100 VOLT, 40 WATT  
h
= 750 (Min) @ I = 1.5 and 2.0 Adc  
C
FE  
Monolithic Construction  
BD676, 676A, 678, 678A, 680, 680A, 682 are complementary  
with BD675, 675A, 677, 677A, 679, 679A, 681  
BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703  
Pb−Free Package are Available*  
TO−225AA  
CASE 77  
STYLE 1  
MAXIMUM RATINGS  
3
2
1
Rating  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
V
Vdc  
CEO  
BD676, BD676A  
45  
60  
80  
BD678, BD678A  
BD680, BD680A  
BD682  
MARKING DIAGRAMS  
100  
Collector-Base Voltage  
V
Vdc  
CB  
EB  
BD676, BD676A  
BD678, BD678A  
BD680, BD680A  
BD682  
45  
60  
80  
YWW  
B
YWW  
BD6xxG  
BD6xxG  
100  
Emitter-Base Voltage  
Collector Current  
Base Current  
V
5.0  
4.0  
0.1  
Vdc  
Adc  
Adc  
I
C
BD6xx = Device Code  
xx = 76, 76A, 78, 78A,  
80, 80A, 82, or 82T  
I
B
Total Device Dissipation  
P
D
Y
= Year  
@ T = 25°C  
40  
0.32  
W
W/°C  
C
WW  
G
= Work Week  
= Pb−Free Package  
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
Symbol  
Max  
Unit  
Thermal Resistance,  
Junction−to−Case  
R
q
JC  
3.13  
°C/W  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2005  
Publication Order Number:  
October, 2005 − Rev. 12  
BD676/D  

BD678G 替代型号

型号 品牌 替代类型 描述 数据表
MJE700G ONSEMI

完全替代

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
BD678AS ONSEMI

类似代替

4.0 A, 60 V PNP Darlington Bipolar Power Transistor, 2000-BLKBG
BD678 ONSEMI

类似代替

DARLINGTON POWER TRANSISTORS PNP SILICON

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