Datasheet > BD679

BD679

更新时间： 2024-11-04 08:51:43

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	103K
描述
Silicon NPN Darligton Power Transistors

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中文翻译

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数据手册

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BD679 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Darligton Power Transistors

BD675/BD677/BD679

DESCRIPTION

·With TO-126 package

·Complement to type BD676/678/680

·DARLINGTON

·High DC current gain

APPLICATIONS

·For use as output devices in

complementary general–purpose

amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BD675

BD677

BD679

BD675

BD677

BD679

V_CBO

Collector-base voltage

Open emitter

Open base

V_CEO

Collector-emitter voltage

V_EBO

I_C

I_CM

I_B

Emitter -base voltage

Collector current

Open collector

ꢀ

Collector current-Peak

Base current

0.1

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

150

-55~150

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

100

UNIT

K/W

R_{th j-a}

Thermal resistance from junction to ambient

R_{th j-mb}

Thermal resistance from junction to mounting base

3.12

12 3

中文翻译

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