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BD4271EFJ-C PDF预览

BD4271EFJ-C

更新时间: 2024-11-05 11:08:15
品牌 Logo 应用领域
罗姆 - ROHM 监控电容器稳压器
页数 文件大小 规格书
34页 1950K
描述
BD4271EFJ-C是一款45V高耐压稳压器,内置用来监控其输出的复位(RESET)功能和看门狗定时器(WDT)。输出电流能力为550mA,但暗电流却能够保持在很低水平,适用于进一步降低系统的消耗电流。配有可以使输出ON/OFF的CTL引脚,通过设置为CTL=L可以关闭输出,从而可以进一步降低消耗电流。当稳压器的输出低于4.65V(Typ)时,将会输出复位信号。复位信号的恢复延迟时间和看门狗监控时间可以通过外置电容器进行调整。

BD4271EFJ-C 数据手册

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Datasheet  
LDO Regulators with Watchdog Timer and Voltage Detector  
550 mA Output LDO Regulator  
with WDT and Voltage Detector  
BD4271xxx-C Series  
General Description  
Key Specifications  
BD4271xxx-C Series are automotive voltage regulators  
with watchdog timer and offers the output current of 550  
mA while limiting the quiescent current low. A logical  
“HIGH” at the CTL pin enables the LDO regulator and  
“LOW” disables the LDO regulator and keeps current  
consumption low.  
A reset signal is generated for an output voltage VO of  
Typ 4.65 V.  
The reset delay time and watchdog time (WDT) can be  
programmed by the external capacitor.  
AEC-Q100 qualified (Note 1)  
Functional Safety Supportive Automotive Products  
Qualified for Automotive Applications  
Wide Temperature Range (Tj):  
Wide Operating Input Range:  
Low Quiescent Current:  
Output Load Current:  
-40 °C to +150 °C  
-0.3 V to +45 V  
75 µA (Typ)  
550 mA  
Output Voltage:  
Reset Detection Voltage Accuracy:  
5.0 V (Typ) ± 2 %  
4.53 V to 4.77 V  
4.65 V (Typ)  
Enable input  
Over Current Protection (OCP)  
Thermal Shutdown (TSD)  
(Note1: Grade 1)  
Features  
Low ESR ceramic capacitors applicable for output  
Low drop voltage: PDMOS output transistor  
Power on and under-voltage reset  
Programmable reset delay and watchdog time by  
Packages  
W (Typ) x D (Typ) x H (Max)  
9.395 mm x 10.540 mm x 2.005 mm  
10.00 mm x 14.95 mm x 4.50 mm  
4.9 mm x 6.0 mm x 1.0 mm  
HFP: HRP7  
FP2: TO263-7  
EFJ: HTSOP-J8  
external capacitor  
Applications  
Onboard Vehicle Device  
(Engine ECU, Body-control, Car Stereos, Satellite  
Navigation System, etc.)  
HRP7  
TO263-7  
HTSOP-J8  
Typical Application Circuit  
CIN ≥ 0.1 µF, CCT = 0.001 µF to 10 µF, CO ≥ 6 µF  
CTL  
GND  
CLK  
VCC  
RO  
CT  
VO  
CIN  
CCT CO  
Product structure : Silicon integrated circuit This product has no designed protection against radioactive rays.  
www.rohm.com  
TSZ02201-0G9G0AN00610-1-2  
30.Mar.2023 Rev.004  
© 2016 ROHM Co., Ltd. All rights reserved.  
1/31  
TSZ2211114001  

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