Datasheet > BD433_11

BD433_11

更新时间： 2024-02-11 19:54:16

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	128K
描述
NPN Epitaxial Silicon Transistor

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数据手册

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BD433_11 数据手册

July 2011

BD433/435/437

NPN Epitaxial Silicon Transistor

Features

• Medium Power Linear and Switching Applications

• Complement to BD434, BD436 and BD438 respectively

TO-126

1. Emitter 2.Collector 3.Base

Ordering Information

Part Number

BD433S

Marking

BD433

BD435

BD437

Package

TO-126

Packing Method

Remarks

BULK

RAIL

BD435S

BD435STU

BD437S

BULK

* The suffix "S" of FSID denotes TO126 package.

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_CBO

Parameter

Collector-Base Voltage

Value

Units

: BD433

: BD435

: BD437

V_CES

Collector-Emitter Voltage

: BD433

: BD435

: BD437

V_CEO

Collector-Emitter Voltage

: BD433

: BD435

: BD437

V_EBO

I_C

I_CP

I_B

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current

P_C

Collector Dissipation (T_C= 25°C)

Junction Temperature

Storage Temperature

150

°C

T_J

T_STG

- 65 to 150

BD433/435/437 Rev. B0

www.fairchildsemi.com

12 3 4 5

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与BD433_11相关器件

型号	品牌	获取价格	描述	数据表
BD433A	NJSEMI	获取价格	Trans GP BJT NPN 22V 4A 3-Pin(3+Tab) TO-126 Bulk
BD433B	NJSEMI	获取价格	Trans GP BJT NPN 22V 4A 3-Pin(3+Tab) TO-126 Bulk
BD433-BP	MCC	获取价格	Power Bipolar Transistor, 4A I(C), 22V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
BD433-BP-HF	MCC	获取价格	Power Bipolar Transistor,
BD433LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 22V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
BD433M2EFJ-C	ROHM	获取价格	BD4xxM2-C系列是45V耐压、输出电压精度±2％、输出电流200mA、消耗电流40µ
BD433M2EFJ-CE2	ROHM	获取价格	Fixed Positive LDO Regulator, 3.3V, 0.45V Dropout, PDSO8, HTSOP-8
BD433M2FP3-C	ROHM	获取价格	BD4xxM2-C系列是45V耐压、输出电压精度±2％、输出电流200mA、消耗电流40µ
BD433M2FP3-CE2	ROHM	获取价格	Fixed Positive LDO Regulator, 3.3V, 0.45V Dropout, PDSO4, SOT223, 4 PIN
BD433M2WEFJ-C	ROHM	获取价格	BD4xxM2-C系列是45V耐压、输出电压精度±2％、输出电流200mA、消耗电流40µ