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BD433

更新时间: 2024-02-06 11:32:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管局域网
页数 文件大小 规格书
4页 73K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

BD433 技术参数

生命周期:Contact Manufacturer包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliant风险等级:5.65
最大集电极电流 (IC):4 A集电极-发射极最大电压:22 V
配置:SINGLE最小直流电流增益 (hFE):50
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
参考标准:TS 16949表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

BD433 数据手册

 浏览型号BD433的Datasheet PDF文件第2页浏览型号BD433的Datasheet PDF文件第3页浏览型号BD433的Datasheet PDF文件第4页 
BD433/5/7  
BD434/6/8  
COMPLEMENTARY SILICON POWER TRANSISTORS  
SGS-THOMSON PREFERRED SALESTYPES  
COMPLEMENTARY PNP - NPN DEVICES  
DESCRIPTION  
The BD433, BD435, and BD437 are silicon  
epitaxial-base NPN power transistors in Jedec  
SOT-32 plastic package, intented for use in  
medium power linear and switching applications.  
The BD433 is especially suitable for use in  
car-radio output stages.  
1
2
3
The complementary PNP types are BD434,  
BD436, and BD438 respectively.  
SOT-32  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN  
PNP  
BD433  
BD434  
22  
BD435  
BD437  
BD438  
45  
BD436  
VCBO  
VCES  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
32  
V
V
22  
32  
45  
22  
32  
45  
V
5
V
4
A
ICM  
Collector Peak Current (t 10 ms)  
Base Current  
7
A
IB  
1
36  
A
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc ≤ 25 C  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
For PNP types voltage and current values are negative.  
1/4  
June 1997  

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