生命周期: | Contact Manufacturer | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | 风险等级: | 5.65 |
最大集电极电流 (IC): | 4 A | 集电极-发射极最大电压: | 22 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 50 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
参考标准: | TS 16949 | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 3 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
BD433_03 | STMICROELECTRONICS | COMPLEMENTARY SILICON POWER TRANSISTORS |
获取价格 |
|
BD433_11 | FAIRCHILD | NPN Epitaxial Silicon Transistor |
获取价格 |
|
BD433A | NJSEMI | Trans GP BJT NPN 22V 4A 3-Pin(3+Tab) TO-126 Bulk |
获取价格 |
|
BD433B | NJSEMI | Trans GP BJT NPN 22V 4A 3-Pin(3+Tab) TO-126 Bulk |
获取价格 |
|
BD433-BP | MCC | Power Bipolar Transistor, 4A I(C), 22V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ |
获取价格 |
|
BD433-BP-HF | MCC | Power Bipolar Transistor, |
获取价格 |