Datasheet > BD433S_11

BD433S_11

更新时间： 2024-02-03 22:36:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	128K
描述
NPN Epitaxial Silicon Transistor

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数据手册

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BD433S_11 数据手册

July 2011

BD433/435/437

NPN Epitaxial Silicon Transistor

Features

• Medium Power Linear and Switching Applications

• Complement to BD434, BD436 and BD438 respectively

TO-126

1. Emitter 2.Collector 3.Base

Ordering Information

Part Number

BD433S

Marking

BD433

BD435

BD437

Package

TO-126

Packing Method

Remarks

BULK

RAIL

BD435S

BD435STU

BD437S

BULK

* The suffix "S" of FSID denotes TO126 package.

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_CBO

Parameter

Collector-Base Voltage

Value

Units

: BD433

: BD435

: BD437

V_CES

Collector-Emitter Voltage

: BD433

: BD435

: BD437

V_CEO

Collector-Emitter Voltage

: BD433

: BD435

: BD437

V_EBO

I_C

I_CP

I_B

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current

P_C

Collector Dissipation (T_C= 25°C)

Junction Temperature

Storage Temperature

150

°C

T_J

T_STG

- 65 to 150

BD433/435/437 Rev. B0

www.fairchildsemi.com

12 3 4 5

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