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BD433S PDF预览

BD433S

更新时间: 2024-11-30 21:18:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
5页 41K
描述
Power Bipolar Transistor, 4A I(C), 22V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN

BD433S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-126
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.62
最大集电极电流 (IC):4 A集电极-发射极最大电压:22 V
配置:SINGLE最小直流电流增益 (hFE):50
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):36 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

BD433S 数据手册

 浏览型号BD433S的Datasheet PDF文件第2页浏览型号BD433S的Datasheet PDF文件第3页浏览型号BD433S的Datasheet PDF文件第4页浏览型号BD433S的Datasheet PDF文件第5页 
BD433/435/437  
Medium Power Linear and Switching  
Applications  
Complement to BD434, BD436 and BD438 respectively  
TO-126  
1. Emitter 2.Collector 3.Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
CBO  
: BD433  
: BD435  
: BD437  
22  
32  
45  
V
V
V
V
CES  
CEO  
EBO  
: BD433  
: BD435  
: BD437  
22  
32  
45  
V
V
V
V
V
: BD433  
: BD435  
: BD437  
22  
32  
45  
V
V
V
Emitter-Base Voltage  
Collector Current (DC)  
5
V
A
I
I
I
4
C
*Collector Current (Pulse)  
Base Current  
7
A
CP  
B
1
36  
A
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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