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BD434

更新时间: 2024-11-04 12:51:11
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COMSET 晶体晶体管局域网
页数 文件大小 规格书
3页 74K
描述
SILICON PNP POWER TRANSISTORS

BD434 数据手册

 浏览型号BD434的Datasheet PDF文件第2页浏览型号BD434的Datasheet PDF文件第3页 
BD434 – BD436 – BD438  
SILICON PNP POWER TRANSISTORS.  
The BD434-BD436-BD438 are PNP Transistors mounted in Jedec TO-126 plastic package.  
They are recommended for use in medium power linear and switching applications.  
NPN complements are BD433-BD435-BD437.  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
Ratings  
Collector-Base Voltage (IE= 0)  
Value  
Unit  
BD434  
BD436  
BD438  
BD434  
BD436  
BD438  
-22  
-32  
-45  
-22  
-32  
-45  
V
VCEO  
Collector-Emitter Voltage (IB= 0)  
V
VEBO  
IC  
ICM  
IB  
PC  
TJ  
TStg  
Emitter-Base Voltage (Ic= 0)  
Collector Current  
Collector Current Peak  
Base Current  
Total power Dissipation  
Junction Temperature  
Storage Temperature  
-5  
-4  
-7  
-1  
36  
V
A
A
TC = 25°C  
W
°C  
°C  
150  
-65 to +150  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
Thermal Resistance, Junction-Case  
Thermal Resistance, Junction-ambient in free air  
3.5  
100  
°C/W  
°C/W  
RthJ-c  
RthJ-a  
25/09/2012  
27/08/2012  
COMSET SEMICONDUCTORS  
1 | 3  

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