Datasheet > BD433U2EFJ-C

BD433U2EFJ-C

更新时间： 2024-11-29 11:06:55

品牌	Logo	应用领域
罗姆 - ROHM		电池生产线过电流保护电容器陶瓷电容器稳压器
页数	文件大小	规格书
37页	1442K
描述
BD433U2EFJ-C是45V耐压、输出电压精度±2%、输出电流200mA、静态电流40μA、输出电压恒定（3.3V）的低静态电流稳压器。本IC非常适合用来降低电池直连系统中的消耗电流。可以启用或禁用输出关闭功能，针对支持该功能的产品，当对CTL引脚施加HIGH电压时，元器件的输出ON；当施加LOW电压时，元器件的输出OFF。输出的相位补偿电容器可使用陶瓷电容器。另外，本IC还内置过电流保护电路，可防止输出短路等导致的IC损坏；内置过热保护电路，可防止IC因过负载状态等导致的热损坏。本系列产品中的BD433M2EFJ-C是为提高生产效率而变更生产线后的型号。在新项目选型时，建议选择该型号。另外，在技术规格书中的保证特性并没有差异。

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BD433U2EFJ-C 数据手册

Datasheet

200-mA 3.3-V or 5.0-V Output

LDO Regulators

BD4xxM2-C Series

●General Description

●Features

The BD4xxM2-C series are low quiescent regulators

featuring 45 V absolute maximum voltage, and output

voltage accuracy of ±2 % ( 3.3 V or 5.0 V: Typ.), 200 mA

output current and 40 μA (Typ.) current consumption.

These regulators are therefore ideal for applications

requiring a direct connection to the battery and a low

current consumption.

 Qualified for Automotive Applications

 Wide Temperature Range:

 Wide Operating Input Range:

 Low Quiescent Current:

 Output Current:

-40 °C to +150 °C

3.0 V to 42 V

40 μA (Typ.)

200 mA

 High Output Voltage Accuracy:

 Output Voltage:

±2 %

3.3 V or 5.0 V (Typ.)

A logical “HIGH” at the CTL pin enables the device and

“LOW” at the CTL pin not enables the device.

(Only W: Includes switch)

Ceramic capacitors can be used for compensation of the

output capacitor phase. Furthermore, these ICs also

feature overcurrent protection to protect the device from

damage caused by short-circuiting and an integrated

thermal shutdown to protect the device from overheating

at overload conditions.

 Enable Input (Only W: Includes Enable Input)

 Over Current Protection (OCP)

 Thermal Shutdown Protection (TSD)

 AEC-Q100 Qualified

●Packages

 EFJ: HTSOP-J8

W (Typ.) x D (Typ.) x H (Max.)

4.90 mm x 6.00 mm x 1.00 mm

 FP3: SOT223-4F

6.53 mm x 7.00 mm x 1.80 mm

Figure 1. Package Outlook

●Applications

 Automotive

(body, audio system, navigation system, etc.)

●Typical Application Circuits

 Components externally connected: 0.1 µF ≤ CIN, 10 µF ≤ COUT (Typ.)

*Electrolytic, Tantalum and Ceramic capacitors can be used.

4:GND

8:VCC

7:N.C.

6:N.C.

5:GND

BD4xxM2WFP3-C

CIN

BD4xxM2EFJ-C

1:VCC

2:CTL

3:VOUT

1:VOUT 2:N.C.

3:N.C.

4:N.C.

COUT

CIN

COUT

BD433 / 450M2WFP3-C

BD433 / 450M2WEFJ-C

BD433 / 450M2EFJ-C

BD433 / 450M2FP3-C

HTSOP-J8

SOT223-4F

Figure 2. Typical Application Circuits

○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays

www.rohm.com

TSZ02201-0T2T0AN00040-1-2

29.Oct.2013 Rev.003

1/34

TSZ22111・14・001

12 3 4 5 6 7...37

中文翻译

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与BD433U2EFJ-C相关器件

型号	品牌	获取价格	描述	数据表
BD433U2WEFJ-C	ROHM	获取价格	BD433U2WEFJ-C是45V耐压、输出电压精度±2%、输出电流200mA、静态电流4
BD434	INFINEON	获取价格	PNP SILICON EPIBASE TRANSISTORS
BD434	FAIRCHILD	获取价格	Medium Power Linear and Switching Applications
BD434	STMICROELECTRONICS	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
BD434	COMSET	获取价格	SILICON PNP POWER TRANSISTORS
BD434	SAVANTIC	获取价格	Silicon PNP Power Transistors
BD434	ISC	获取价格	Silicon PNP Power Transistors
BD434	MCC	获取价格	PNP Silicon Power Transistors
BD434	NJSEMI	获取价格	Trans GP BJT PNP 22V 4A 3-Pin(3+Tab) SOT-32 Tube
BD434	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 22V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/

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