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BD433-BP PDF预览

BD433-BP

更新时间: 2024-11-30 20:05:39
品牌 Logo 应用领域
美微科 - MCC 局域网开关晶体管
页数 文件大小 规格书
3页 288K
描述
Power Bipolar Transistor, 4A I(C), 22V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC PACKAGE-3

BD433-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SIP
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.64最大集电极电流 (IC):4 A
集电极-发射极最大电压:22 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

BD433-BP 数据手册

 浏览型号BD433-BP的Datasheet PDF文件第2页浏览型号BD433-BP的Datasheet PDF文件第3页 
M C C  
TM  
Micro Commercial Components  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
BD433/BD435/BD437  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
·
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates  
NPN Silicon  
Power Transistors  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
·
·
Intended for use in medium power near and switching applications  
With TO-126 package  
The complementary PNP type is BD434, BD436, BD438  
Halogen free available upon request by adding suffix "-HF"  
ꢀꢁꢂꢃꢄꢅꢆ  
K
A
N
Maximum Ratings  
Symbol  
VCEO  
Parameter  
Collector-Emitter Voltage  
Rating  
22  
32  
45  
22  
32  
45  
Unit  
V
D
BD433  
BD435  
BD437  
BD433  
BD435  
BD437  
BD433  
BD435  
BD437  
E
M
B
VCBO  
Collector-Base Voltage  
Emitter-Base Voltage  
V
V
VEBO  
5.0  
1
2
3
IC  
PC  
TJ  
Collector Current  
4.0  
1.25  
-55 to +150  
A
L
Collector power dissipation  
Junction Temperature  
Storage Temperature  
W
R
R
G
TSTG  
-55 to +150  
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
C
OFF CHARACTERISTICS  
V(BR)CEO  
Collector-Emitter Breakdown Voltage  
(IC=100mAdc, IB=0)  
BD433  
BD435  
BD437  
22  
32  
45  
---  
---  
---  
Vdc  
V(BR)CBO  
Collector-Base Breakdown Voltage  
F
Q
22  
32  
45  
---  
---  
---  
(IC=100IAdc, IE=0)  
BD433  
BD435  
BD437  
Vdc  
Vdc  
PIN 1.  
PIN 2.  
PIN 3.  
EMITTER  
COLLECTOR  
BASE  
J
V(BR)EBO  
ICBO  
Emitter-Base Breakdown Voltage  
(IE=100IAdc, IC=0)  
5
---  
DIMENSIONS  
Collector-Base Cutoff Current  
ꢀꢁꢂꢃꢄꢅꢆ  
ꢇꢀꢁꢆ  
ꢇꢇꢆ  
ꢇꢀꢁꢆ  
7.40  
(VCB=22Vdc,IE=0)  
(VCB=32Vdc,IE=0)  
(VCB=45Vdc,IE=0)  
BD433  
BD435  
BD437  
ꢈꢀꢇꢆ  
ꢉꢆ  
ꢇꢉꢊꢆ  
0.307ꢆ  
0.433  
0.618  
ꢎꢏꢐꢒ1  
0.126  
0.034  
0.054  
ꢇꢉꢊꢆ  
ꢁꢋꢌꢄꢆ  
---  
1.0  
uAdc  
0.291  
0.417  
0.602  
ꢎꢏꢐꢑ4  
0.118  
0.026  
0.046  
7.80  
11.00  
15.70  
4.10  
3.20  
0.86  
1.37  
10.60  
15.30  
3.90  
3.00  
0.66  
1.17  
ꢂꢆ  
ꢈꢆ  
ꢄꢆ  
ICEO  
Collector-Base Cutoff Current  
(VCE=22Vdc,IE=0)  
(VCE=32Vdc,IE=0)  
(VCE=45Vdc,IE=0)  
BD433  
BD435  
BD437  
---  
---  
10  
uAdc  
uAdc  
ꢕꢆ  
0.090TYP  
0.098  
2.290TYP  
2.50 2.90  
2.30  
0.30  
1.50  
0.60  
IEBO  
Emitter-Base Cutoff Current  
(VEB=5.0Vdc, IC=0)  
1.0  
ꢖꢆ  
0.114  
L
M
N
0.083  
0.000  
0.043  
0.091  
0.012  
0.059  
2.10  
0.00  
1.10  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.  
Q
0.018  
0.024  
0.45  
www.mccsemi.com  
Revision: B  
2013/01/01  
1 of 3  

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