Datasheet > BD433

BD433

更新时间： 2024-11-30 06:41:51

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
3页	118K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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BD433 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BD433/435/437

DESCRIPTION

·With TO-126 package

·Complement to type BD434/436/438

APPLICATIONS

·For medium power linear and

switching applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BD433

BD435

BD437

BD433

BD435

BD437

V_CBO

Collector-base voltage

Open emitter

Open base

V_CEO

Collector-emitter voltage

V_EBO

I_C

I_CM

I_B

Emitter -base voltage

Collector current (DC)

Collector current-Peak

Base current

Open collector

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

150

-65~150

T_stg

12 3

中文翻译

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与BD433相关器件

型号	品牌	获取价格	描述	数据表
BD433_03	STMICROELECTRONICS	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
BD433_11	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor
BD433A	NJSEMI	获取价格	Trans GP BJT NPN 22V 4A 3-Pin(3+Tab) TO-126 Bulk
BD433B	NJSEMI	获取价格	Trans GP BJT NPN 22V 4A 3-Pin(3+Tab) TO-126 Bulk
BD433-BP	MCC	获取价格	Power Bipolar Transistor, 4A I(C), 22V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
BD433-BP-HF	MCC	获取价格	Power Bipolar Transistor,
BD433LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 22V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
BD433M2EFJ-C	ROHM	获取价格	BD4xxM2-C系列是45V耐压、输出电压精度±2％、输出电流200mA、消耗电流40µ
BD433M2EFJ-CE2	ROHM	获取价格	Fixed Positive LDO Regulator, 3.3V, 0.45V Dropout, PDSO8, HTSOP-8
BD433M2FP3-C	ROHM	获取价格	BD4xxM2-C系列是45V耐压、输出电压精度±2％、输出电流200mA、消耗电流40µ