是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | Reach Compliance Code: | compliant |
Factory Lead Time: | 1 week | 风险等级: | 7.33 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 45 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
参考标准: | AEC-Q101 | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BCP5416TA | DIODES |
类似代替 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCP54-16H6327TR | INFINEON |
获取价格 |
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
BCP5416H6327XTSA1 | INFINEON |
获取价格 |
Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin, SOT223, 4 PIN | |
BCP54-16H6433TR | INFINEON |
获取价格 |
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
BCP5416H6433XTMA1 | INFINEON |
获取价格 |
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
BCP5416Q | DIODES |
获取价格 |
NPN, 45V, 1A, SOT223 | |
BCP54-16Q | YANGJIE |
获取价格 |
SOT-223 | |
BCP54-16-Q | NEXPERIA |
获取价格 |
45 V, 1 A NPN medium power transistorsProduction | |
BCP54-16T | NEXPERIA |
获取价格 |
45 V, 1 A NPN medium power transistorsProduction | |
BCP5416TA | DIODES |
获取价格 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 | |
BCP54-16TA | DIODES |
获取价格 |
1A, 45V, NPN, Si, POWER TRANSISTOR |