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BCP54L99Z PDF预览

BCP54L99Z

更新时间: 2024-11-27 14:41:03
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飞兆/仙童 - FAIRCHILD /
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BCP54L99Z 数据手册

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Discr ete P OWER & Sign a l  
Tech n ologies  
BCP54  
C
E
C
B
SOT-223  
NPN General Purpose Amplifier  
This device is designed for general purpose medium power  
amplifiers and switching circuits requiring collector currents  
to 1.2 A. Sourced from Process 38.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
45  
45  
V
V
V
A
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
1.5  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
BCP54  
PD  
Total Device Dissipation  
Derate above 25 C  
1.5  
12  
W
mW/ C  
°
°
Thermal Resistance, Junction to Ambient  
83.3  
Rθ  
C/W  
°
JA  
ã 1997 Fairchild Semiconductor Corporation  

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