是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.58 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 45 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 100 |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 参考标准: | AEC-Q101 |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCP5416H6433XTMA1 | INFINEON |
获取价格 |
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
BCP5416Q | DIODES |
获取价格 |
NPN, 45V, 1A, SOT223 | |
BCP54-16Q | YANGJIE |
获取价格 |
SOT-223 | |
BCP54-16-Q | NEXPERIA |
获取价格 |
45 V, 1 A NPN medium power transistorsProduction | |
BCP54-16T | NEXPERIA |
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45 V, 1 A NPN medium power transistorsProduction | |
BCP5416TA | DIODES |
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NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 | |
BCP54-16TA | DIODES |
获取价格 |
1A, 45V, NPN, Si, POWER TRANSISTOR | |
BCP54-16TA | ZETEX |
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Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
BCP54-16-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 1 A, 45 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BCP54-16-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 1 A, 45 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power |