生命周期: | Obsolete | 零件包装代码: | SC-73 |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.07 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 45 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 100 |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 130 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCP54-6 | ETC |
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BCP54BCP56 | INFINEON |
获取价格 |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) | |
BCP54D84Z | TI |
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1.5A, 45V, NPN, Si, POWER TRANSISTOR, TO-261 | |
BCP54D84Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
BCP54E6327 | INFINEON |
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Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | |
BCP54E-6327 | INFINEON |
获取价格 |
NPN Silicon AF Transistors | |
BCP54E6327HTSA1 | INFINEON |
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Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | |
BCP54E6433 | INFINEON |
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Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | |
BCP54H6327XTSA1 | INFINEON |
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Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin, SOT223, 4 PIN | |
BCP54L99Z | FAIRCHILD |
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暂无描述 |