Datasheet > BC857BV_09

BC857BV_09

更新时间： 2024-09-15 08:49:55

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	101K
描述
PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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中文翻译

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BC857BV_09 数据手册

BC857BV

PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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Features

Mechanical Data

•

Epitaxial Die Construction

Complementary PNP Type Available (BC847BV)

Ultra-Small Surface Mount Package

Lead Free By Design/RoHS Compliant (Note 3)

"Green" Device (Notes 5 and 6)

Qualified to AEC-Q101 Standards for High Reliability

•

Case: SOT-563

Case Material: Molded Plastic, “Green” Molding Compound,

Note 6. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminal Connections: See Diagram

Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 2

Ordering Information: See Page 2

Weight: 0.003 grams (approximate)

C₁

E₂

B₂

B₁

E₁

C₂

Device Schematic (Note 1)

Top View

Bottom View

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

-50

-45

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

-5.0

-100

Collector Current

Thermal Characteristics

Characteristic

Power Dissipation (Note 2)

Symbol

Value

150

Unit

°C/W

°C

P_D

Thermal Resistance, Junction to Ambient (Note 2)

Operating and Storage Temperature Range

833

R_θ

-55 to +150

T_J, T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

h_FE

Min

-50

-45

-5

Typ

—

Max

—

Unit

Test Condition

Collector-Base Breakdown Voltage (Note 4)

Collector-Emitter Breakdown Voltage (Note 4)

Emitter-Base Breakdown Voltage (Note 4)

DC Current Gain (Note 4)

I_C= 10μA, I_B= 0

I_C= 10mA, I_B= 0

—

I_E= 1μA, I_C= 0

220

290

475

—

V_CE= -5.0V, I_C= -2.0mA

I_C= -10mA, I_B= -0.5mA

I_C= -100mA, I_B= -5.0mA

I_C= -10mA, I_B= -0.5mA

I_C= -100mA, I_B= -5.0mA

V_CE= -5.0V, I_C= -2.0mA

V_CE= -5.0V, I_C= -10mA

V_CB= -30V

V_CB= -30V, T_A= 150°C

V_CE= -5.0V, I_C= -10mA, f = 100MHz

V_CB= -10V, f = 1.0MHz

I_C= -0.2mA, V_CE= -5.0Vdc,

R_S= 2.0KΩ, f = 1.0KHz, BW = 200Hz

—

-100

-400

Collector-Emitter Saturation Voltage (Note 4)

Base-Emitter Saturation Voltage (Note 4)

Base-Emitter Voltage (Note 4)

—

V_CE(SAT)

V_BE(SAT)

V_BE(ON)

I_CBO

—

-700

-900

—

-600

—

-750

-820

—

-15

-4.0

µA

Collector-Cutoff Current (Note 4)

Gain Bandwidth Product

Output Capacitance

100

—

MHz

f_T

4.5

C_OB

Noise Figure

—

Notes:

1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).

2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

3. No purposefully added lead.

4. Short duration pulse test used to minimize self-heating effect.

5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code

UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

1 of 4

www.diodes.com

April 2009

BC857BV

Document number: DS30433 Rev. 5 - 2

12 3 4

中文翻译

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