Datasheet > BC846AW-G

BC846AW-G

更新时间： 2024-09-09 12:50:19

品牌	Logo	应用领域
上华 - COMCHIP		晶体晶体管
页数	文件大小	规格书
5页	135K
描述
Small Signal Transistor

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中文翻译

获取价格

数据手册

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BC846AW-G 数据手册

Small Signal Transistor

BC846AW-G Thru. BC848CW-G (NPN)

RoHS Device

Features

-Power dissipation

PCM: 0.15W (@TA=25°C)

-Collector current

SOT-323

ICM: 0.1A

-Collector-base voltage

0.087 (2.20)

0.079 (2.00)

VCBO: BC846W=80V

BC847W=50V

BC848W=30V

0.053(1.35)

0.045(1.15)

-Operating and storage junction temperature

range: TJ, TSTG= -55 to +150°C

0.006 (0.15)

0.003 (0.08)

0.055 (1.40)

0.047 (1.20)

Mechanical data

0.096 (2.45)

0.085 (2.15)

0.039 (1.00)

0.035 (0.90)

-Case: SOT-323, molded plastic.

-Terminals: solderable per MIL-STD-750,

method 2026.

-Approx. weight: 0.008 grams

0.004 (0.10) max

0.016 (0.40)

0.008 (0.20)

0.018 (0.46)

0.010 (0.26)

Circuit diagram

-1.BASE

-2.EMITTER

-3.COLLECTOR

Dimensions in inches and (millimeter)

Maximum Ratings (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Value

Units

BC846W-G

BC847W-G

BC848W-G

Collector-Base Voltage

VCBO

BC846W-G

BC847W-G

BC848W-G

Collector-Emitter Voltage

Emitter-Base Voltage

VCEO

VEBO

BC846W-G / BC847W-G

BC848W-G

0.1

150

Collector Current -Continuous

Collector Power Dissipation

^OC

Junction Temperature

150

Storage Temperature Range

TSTG

-55 to +150

REV:A

Page 1

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Comchip Technology CO., LTD.

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中文翻译

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