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BC846AWT1G PDF预览

BC846AWT1G

更新时间: 2024-11-03 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 放大器光电二极管晶体管
页数 文件大小 规格书
13页 111K
描述
General Purpose Transistor NPN

BC846AWT1G 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:5.2最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:65 V配置:SINGLE
最小直流电流增益 (hFE):110JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC846AWT1G 数据手册

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BC846, BC847, BC848  
General Purpose  
Transistors  
NPN Silicon  
These transistors are designed for general purpose amplifier  
applications. They are housed in the SC−70/SOT−323 which is  
designed for low power surface mount applications.  
www.onsemi.com  
COLLECTOR  
3
Features  
S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
1
BASE  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
2
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
V
CEO  
V
CBO  
V
EBO  
V
3
SC−70/SOT−323  
BC846  
BC847  
BC848  
65  
45  
30  
CASE 419  
STYLE 3  
1
2
Collector-Base Voltage  
Emitter-Base Voltage  
V
V
BC846  
BC847  
BC848  
80  
50  
30  
MARKING DIAGRAM  
BC846  
BC847  
BC848  
6.0  
6.0  
5.0  
XX MG  
G
Collector Current − Continuous  
I
C
100  
mAdc  
Stresses exceeding those listed in the Maximum Ratings table may damage  
the device. If any of these limits are exceeded, device functionality should not  
be assumed, damage may occur and reliability may be affected.  
XX  
M
G
= Specific Device Code  
= Month Code  
= Pb−Free Package  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
(Note: Microdot may be in either location)  
Total Device Dissipation FR5 Board,  
(Note 1) T = 25°C  
P
D
200  
mW  
A
Thermal Resistance,  
Junction−to−Ambient  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 12 of this data sheet.  
R
620  
°C/W  
°C  
q
JA  
Junction and Storage Temperature  
T , T  
J
55 to  
+150  
stg  
1. FR−5 = 1.0 x 0.75 x 0.062 in.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
April, 2015 − Rev. 12  
BC846AWT1/D  
 

BC846AWT1G 替代型号

型号 品牌 替代类型 描述 数据表
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