BC846AW-TP

更新时间： 2024-11-21 08:49:43

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
5页	585K
描述
NPN General Purpose Transistors

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中文翻译

获取价格

数据手册
替代型号

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BC846AW-TP 数据手册

M C C

BC846AW/BW

BC847AW/BW/CW

BC848AW/BW/CW

Micro Commercial Components

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

NPN

General Purpose

Transistors

•

Low current (max. 100mA)

Low voltage (max. 65V)

Case Material:Molded Plastic. UL Flammability Classification

Rating 94V-0 and MSL Rating 1

Maximum Ratings

•

Operating temperature : -65R to +150R

Storage temperature : -65R to +150R

Thermal resistance from junction to ambient*: 625K/W

SOT-323

Marking: BC846AW---1A ; BC846BW---1B

BC847AW---1E ; BC847BW---1F ; BC847CW---1G

BC848AW---1JS/1J ; BC848BW---1KS/1K ; BC848CW---1LS/1L

Electrical Characteristics @ 25R Unless Otherwise Specified

Min

Symbol

Parameter

Max

Units

OFF CHARACTERISTICS

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

Collector-Base Breakdown Voltage

(I_C=10uAdc, IE=0)

Vdc

BC846AW/BW

BC847AW/BW/CW

BC848AW/BW/CW

---

DIMENSIONS

INCHES

Collector-Emitter Breakdown Voltage

(I_C=10mAdc, IB=0)

Vdc

BC846AW/BW

BC847AW/BW/CW

BC848AW/BW/CW

---

DIM

MIN

.071

.045

.079

.026 Nominal

.047

.012

.000

.035

.004

.012

MAX

.087

.053

.087

MIN

1.80

1.15

2.00

MAX

2.20

1.35

2.20

NOTE

Emitter-Base Breakdown Voltage

(I_E=1µAdc, I_C=0)

0.65Nominal

1.20

.055

.016

.004

.039

.010

.016

1.40

.40

.100

1.00

.250

.40

BC846AW/BW, BC847AW/BW/CW

---

100

200

.30

.000

.90

.100

.30

BC848AW/BW/CW

I_C

I_CM

I_BM

Collector Current (DC)

Peak Collector Current

Peak Base Current

mAdc

Suggested Solder

Pad Layout

0.70

* Transistor mounted on an FR4 printed-circuit board

0.90

1.90

0.65

www.mccsemi.com

Revision: 6

2008/01/01

1 of 5

12 3 4 5

中文翻译

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BC846AW-TP 替代型号

型号	品牌	替代类型	描述	数据表
SBC846ALT1G	ONSEMI	功能相似	General Purpose Transistors
LBC846ALT1G	LRC	功能相似	General Purpose Transistors NPN Silicon

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