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SBC846ALT1G PDF预览

SBC846ALT1G

更新时间: 2024-11-05 12:04:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管PC
页数 文件大小 规格书
13页 178K
描述
General Purpose Transistors

SBC846ALT1G 技术参数

是否无铅:不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:5 weeks风险等级:1.51
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:227060Samacsys Pin Count:3
Samacsys Part Category:Transistor BJT NPNSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08Samacsys Released Date:2015-09-09 02:44:12
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:65 V配置:SINGLE
最小直流电流增益 (hFE):110JEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
参考标准:AEC-Q101子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

SBC846ALT1G 数据手册

 浏览型号SBC846ALT1G的Datasheet PDF文件第2页浏览型号SBC846ALT1G的Datasheet PDF文件第3页浏览型号SBC846ALT1G的Datasheet PDF文件第4页浏览型号SBC846ALT1G的Datasheet PDF文件第5页浏览型号SBC846ALT1G的Datasheet PDF文件第6页浏览型号SBC846ALT1G的Datasheet PDF文件第7页 
BC846ALT1G Series,  
SBC846ALT1G Series  
General Purpose  
Transistors  
NPN Silicon  
Features  
http://onsemi.com  
Moisture Sensitivity Level: 1  
ESD Rating Human Body Model: >4000 V  
COLLECTOR  
3
ESD Rating Machine Model: >400 V  
AECQ101 Qualified and PPAP Capable  
1
S Prefix for Automotive and Other Applications Requiring Unique  
BASE  
Site and Control Change Requirements  
2
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
EMITTER  
MAXIMUM RATINGS  
3
Rating  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
V
CEO  
Vdc  
1
BC846, SBC846  
BC847, BC850, SBC847  
BC848, BC849, SBC848  
65  
45  
30  
2
SOT23  
CASE 318  
STYLE 6  
CollectorBase Voltage  
V
V
Vdc  
Vdc  
CBO  
BC846, SBC846  
BC847, BC850, SBC847  
BC848, BC849, SBC848  
80  
50  
30  
MARKING DIAGRAM  
EmitterBase Voltage  
EBO  
BC846, SBC846  
BC847, BC850, SBC847  
BC848, BC849, SBC848  
6.0  
6.0  
5.0  
XX M G  
G
Collector Current Continuous  
I
C
100  
mAdc  
1
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
XX = Device Code  
M
= Date Code*  
G
= PbFree Package  
(Note: Microdot may be in either location)  
THERMAL CHARACTERISTICS  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board,  
P
D
225  
mW  
(Note 1)  
T = 25°C  
Derate above 25°C  
A
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 12 of this data sheet.  
1.8  
mW/°C  
°C/W  
Thermal Resistance,  
R
556  
q
JA  
JunctiontoAmbient (Note 1)  
Total Device Dissipation  
P
D
300  
mW  
Alumina Substrate (Note 2)  
T = 25°C  
Derate above 25°C  
A
2.4  
mW/°C  
°C/W  
Thermal Resistance,  
R
417  
q
JA  
JunctiontoAmbient (Note 2)  
Junction and Storage  
Temperature Range  
T , T  
55 to  
+150  
°C  
J
stg  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
November, 2011 Rev. 11  
BC846ALT1/D  
 

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