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SBC847BDW1T3G PDF预览

SBC847BDW1T3G

更新时间: 2024-11-25 12:04:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
11页 144K
描述
Dual General Purpose Transistors

SBC847BDW1T3G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.67
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.38 W参考标准:AEC-Q101
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

SBC847BDW1T3G 数据手册

 浏览型号SBC847BDW1T3G的Datasheet PDF文件第2页浏览型号SBC847BDW1T3G的Datasheet PDF文件第3页浏览型号SBC847BDW1T3G的Datasheet PDF文件第4页浏览型号SBC847BDW1T3G的Datasheet PDF文件第5页浏览型号SBC847BDW1T3G的Datasheet PDF文件第6页浏览型号SBC847BDW1T3G的Datasheet PDF文件第7页 
BC846BDW1T1G,  
SBC846BDW1T1G,  
BC847BDW1T1G,  
SBC847BDW1T1G Series,  
NSVBC847BDW1T2G,  
BC848CDW1T1G  
http://onsemi.com  
Dual General Purpose  
Transistors  
NPN Duals  
SOT363  
CASE 419B  
STYLE 1  
These transistors are designed for general purpose amplifier  
applications. They are housed in the SOT363/SC88 which is  
designed for low power surface mount applications.  
(3)  
(2)  
(1)  
Q
Features  
Q
1
2
S and NSV Prefixes for Automotive and Other Applications  
Requiring Unique Site and Control Change Requirements;  
AECQ101 Qualified and PPAP Capable  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant*  
(4)  
(5)  
(6)  
MARKING DIAGRAM  
6
MAXIMUM RATINGS  
1x MG  
Rating  
Symbol BC846 BC847 BC848 Unit  
G
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
CEO  
V
CBO  
V
EBO  
65  
80  
45  
50  
30  
30  
V
V
1
6.0  
100  
6.0  
100  
5.0  
100  
V
1x = Specific Device Code  
= B, F, G, L  
M = Date Code  
Collector Current −  
Continuous  
I
C
mAdc  
x
G
= PbFree Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation Per Device  
P
D
FR5 Board (Note 1)  
380  
250  
3.0  
mW  
mW/°C  
mW/°C  
T = 25°C  
A
Derate Above 25°C  
Thermal Resistance,  
Junction to Ambient  
R
°C/W  
q
JA  
328  
Junction and Storage Temperature  
Range  
T , T  
55 to +150  
°C  
J
stg  
1. FR5 = 1.0 x 0.75 x 0.062 in  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 Rev. 9  
BC846BDW1T1/D  
 

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