Datasheet > SBC847CWT1G

SBC847CWT1G

更新时间： 2024-11-03 01:03:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
13页	111K
描述
General Purpose Transistors

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数据手册
替代型号

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SBC847CWT1G 数据手册

BC846, BC847, BC848

General Purpose

Transistors

NPN Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SC−70/SOT−323 which is

designed for low power surface mount applications.

www.onsemi.com

COLLECTOR

Features

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

BASE

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

CEO

CBO

EBO

SC−70/SOT−323

BC846

BC847

BC848

CASE 419

STYLE 3

Collector-Base Voltage

Emitter-Base Voltage

BC846

BC847

BC848

MARKING DIAGRAM

BC846

BC847

BC848

6.0

5.0

XX MG

Collector Current − Continuous

100

mAdc

Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

= Specific Device Code

= Month Code

= Pb−Free Package

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

(Note: Microdot may be in either location)

Total Device Dissipation FR−5 Board,

(Note 1) T = 25°C

200

Thermal Resistance,

Junction−to−Ambient

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 12 of this data sheet.

620

°C/W

°C

Junction and Storage Temperature

T , T

−55 to

+150

stg

1. FR−5 = 1.0 x 0.75 x 0.062 in.

Publication Order Number:

April, 2015 − Rev. 12

BC846AWT1/D

12 3 4 5 6 7...13

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SBC847CWT1G 替代型号

型号	品牌	替代类型	描述	数据表
BC847CWT3G	ONSEMI	完全替代	General Purpose Transistors
BC847CWT1G	ONSEMI	完全替代	NPN Bipolar Transistor, SC-70 (SOT-323) 3 LEAD, 3000-REEL
SBC847CWT3G	ONSEMI	类似代替	General Purpose Transistors

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