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BC846ALT3G PDF预览

BC846ALT3G

更新时间: 2024-11-25 08:49:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
13页 126K
描述
General Purpose Transistors

BC846ALT3G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:0.64
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:65 V
配置:SINGLE最小直流电流增益 (hFE):110
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC846ALT3G 数据手册

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BC846ALT1G Series  
General Purpose  
Transistors  
NPN Silicon  
Features  
http://onsemi.com  
Moisture Sensitivity Level: 1  
ESD Rating Human Body Model: >4000 V  
ESD Rating Machine Model: >400 V  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
COLLECTOR  
3
1
BASE  
2
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
3
BC846  
65  
45  
30  
BC847, BC850  
BC848, BC849  
1
2
CollectorBase Voltage  
Vdc  
Vdc  
BC846  
BC847, BC850  
BC848, BC849  
80  
50  
30  
SOT23  
CASE 318  
STYLE 6  
EmitterBase Voltage  
BC846  
BC847, BC850  
BC848, BC849  
6.0  
6.0  
5.0  
MARKING DIAGRAM  
Collector Current Continuous  
I
100  
mAdc  
C
XX M G  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
G
1
XX = Device Code  
THERMAL CHARACTERISTICS  
M
= Date Code*  
G
= PbFree Package  
Characteristic  
Symbol  
Max  
Unit  
(Note: Microdot may be in either location)  
Total Device Dissipation FR5 Board,  
P
225  
mW  
D
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
(Note 1)  
T = 25°C  
A
Derate above 25°C  
1.8  
mW/°C  
°C/W  
Thermal Resistance,  
R
q
556  
JA  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 12 of this data sheet.  
JunctiontoAmbient (Note 1)  
Total Device Dissipation  
P
300  
mW  
D
Alumina Substrate (Note 2)  
T = 25°C  
Derate above 25°C  
A
2.4  
mW/°C  
°C/W  
Thermal Resistance,  
R
q
417  
JA  
JunctiontoAmbient (Note 2)  
Junction and Storage  
Temperature Range  
T , T  
55 to  
+150  
°C  
J
stg  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
October, 2010 Rev. 10  
BC846ALT1/D  
 

BC846ALT3G 替代型号

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BC846ALT1G ONSEMI

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