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BC846AS

更新时间： 2024-09-23 08:49:43
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 203K
描述
DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

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BC846AS 数据手册

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BC846AS  
DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
A
•
•
•
•
•
Ideally Suited for Automatic Insertion  
For Switching and AF Amplifier Applications  
Complementary PNP Type Available (BC856AS)  
Lead Free/RoHS Compliant (Note 1)  
"Green" Device (Note 4 and 5)  
SOT-363  
Dim  
A
B
C
D
F
Min  
0.10  
1.15  
2.00  
Max  
0.30  
1.35  
2.20  
C
B
Mechanical Data  
H
•
•
Case: SOT-363  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
0.65 Nominal  
K
J
0.30  
1.80  
⎯
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
M
H
J
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
L
D
F
K
L
0.90  
0.25  
0.10  
0°  
C1  
E2  
B2  
6
5
4
•
•
•
•
Terminal Connections: See Diagram  
Marking Information: See Page 3  
Ordering & Date Code Information: See Page 3  
Weight: 0.006 grams (approximate)  
M
α
All Dimensions in mm  
1
3
2
C2  
E1  
B1  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
80  
Unit  
V
65  
V
Collector-Emitter Voltage  
6.0  
V
Emitter-Base Voltage  
Collector Current  
100  
mA  
mA  
mA  
mW  
°C/W  
°C  
Peak Collector Current  
Peak Emitter Current  
200  
ICM  
200  
IEM  
Power Dissipation  
(Note 2)  
(Note 2)  
200  
Pd  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
625  
Rθ  
JA  
-65 to +150  
Tj, Tstg  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
DC Current Gain  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
hFE  
Min  
80  
65  
6
110  
Typ  
—
—
—
—
Max  
—
—
—
220  
Unit  
V
V
V
—
Test Condition  
IC = 10μA, IB = 0  
C = 10mA, IB = 0  
E = 1μA, IC = 0  
CE = 5.0V, IC = 2.0mA  
IC = 10mA, IB = 0.5mA  
C = 100mA, IB = 5.0mA  
IC = 10mA, IB = 0.5mA  
C = 100mA, IB = 5.0mA  
VCE = 5.0V, IC = 2.0mA  
VCE = 5.0V, IC = 10mA  
VCE = 80V  
(Note 3)  
(Note 3)  
(Note 3)  
(Note 3)  
I
I
V
90  
200  
250  
600  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Voltage  
(Note 3)  
(Note 3)  
(Note 3)  
—
—
mV  
mV  
mV  
VCE(SAT)  
VBE(SAT)  
VBE(ON)  
I
700  
900  
—
I
580  
—
660  
—
700  
770  
ICES  
ICBO  
ICBO  
—
—
—
—
—
—
15  
15  
5.0  
nA  
nA  
µA  
Collector-Cutoff Current  
(Note 3)  
VCB = 40V  
CB = 30V, TA = 150°C  
V
VCE = 5.0V, IC = 10mA,  
f = 100MHz  
VCB = 10V, f = 1.0MHz  
Gain Bandwidth Product  
100  
—
—
—
—
MHz  
pF  
fT  
Collector-Base Capacitance  
2.0  
CCB  
Notes:  
1. No purposefully added lead.  
2. Device mounted on FR-4 PCB, pad layout as shown on page 3 or on Diodes Inc. suggested pad layout document AP02001, which can be found on  
our website at http://www.diodes.com/datasheets/ap02001.pdf.  
3. Short duration pulse test used to minimize self-heating effect.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
BC846AS  
© Diodes Incorporated  
DS30833 Rev. 7 - 2  
1 of 3  
www.diodes.com  
123

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