BC846AWP

更新时间： 2024-09-09 13:00:11

品牌	Logo	应用领域
美微科 - MCC		晶体小信号双极晶体管开关光电二极管
页数	文件大小	规格书
2页	216K
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中文翻译

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数据手册

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BC846AWP 数据手册

BC846A

THRU

M C C

Micro Commercial Components

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

BC849C

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Power Dissipation: 0.225W (T_amb=25?)(Note 1)

Collector Current: 0.1A

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

NPN

•

Plastic-Encapsulate

Transistors

Maximum Ratings

•

Operating temperature : -55R to +150R

Storage temperature : -55R to +150R

SOT-23

•

ꢀ

DꢀEVICE MARKING

BC846A=1A,46A; BC846B=1B,46B;

BC847A=1E,47A; BC847B=1F,47B; BC847C=1G,47C;

BC848A=1J,48A; BC848B=1K,48B: BC848C=1L,48C

BC849B=49B; BC849C=49C;

Electrical Characteristics @ 25R Unless Otherwise Specified

Max

Symbol

Parameter

Min

Units

OFF CHARACTERISTICS

V_(BR)CBO

Collector-Base Breakdown Voltage

Vdc

(I_C=10µAdc, I_E=0)

BC846

BC847

BC849

---

DIMENSIONS

BC848,

INCHES

V_(BR)CEO

Collector-Emitter Breakdown Voltage

(I_C=10mAdc, I_B=0)

Vdc

DIM

MIN

MAX

MIN

2.80

2.10

1.20

.89

MAX

NOTE

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

3.04

2.64

1.40

1.03

2.05

.60

BC846

BC847

---

BC848,BC849

Collector-Emitter Breakdown Voltage

(I_E=10µAdc, I_C=0)

1.78

.45

V_(BR)EBO

I_CBO

Vdc

---

0.1

.013

.89

.100

1.12

.180

.51

Collector Cut-off Current

BC846 (V_CB=80V, I_E=0)

BC847 (V_CB=50V, I_E=0)

BC848, BC849 (V_CB=30V, I_E=0)

Collector Cut-off Current

BC846 (V_CE=60V, I_B=0)

BC847 (V_CE=45V, I_B=0)

BC848, BC849 (V_CE=30V, I_B=0)

Emitter Cut-off Current

(V_EB=5V, I_C=0mA)

µAdc

.085

.37

Suggested Solder

Pad Layout

I_CEO

---

0.1

µAdc

.031

.800

I_EBO

.035

.900

H_FE(1)

DC Current Gain(V_CE=5V, I_C=2mA)

BC846A, 847A, 848A

110

200

420

---

220

450

800

0.5

.079

2.000

inches

BC846B, 847B, 848B

,849B

BC847C, BC848C

,BC849C

V_CE(sat)

V_BE(sat)

f_T

Collector-Emitter Saturation Voltage

(I_C=100mA, I_B=5mA)

Base-Emitter Saturation Voltage

(I_C=100mA, I_B=5mA)

Vdc

MHz

---

1.1

---

.037

.950

.037

.950

Transition Frequency

100

(V_CE=5V, I_C=10mA, f=100MHz)

Note 1: Transistor mounted on an FR4 printed-circuit board

www.mccsemi.com

1 of 2

Revision: A

2011/01/01

中文翻译

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与BC846AWP相关器件

型号	品牌	获取价格	描述	数据表
BC846AWQ	YANGJIE	获取价格	SOT-323
BC846AW-Q	NEXPERIA	获取价格	65 V, 100 mA NPN general-purpose transistorsProduction
BC846AWR	CENTRAL	获取价格	65V,100mA,275mW Surface mount Transistor-Small Signal (<=1A) NPN General Purpose Amplifier
BC846AWT/R	NXP	获取价格	TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP Gene
BC846AWT1	MOTOROLA	获取价格	CASE 419-02, STYLE 3 SOT-323/SC-70
BC846AWT1	ONSEMI	获取价格	General Purpose Transistors(NPN Silicon)
BC846AWT1	LRC	获取价格	General Purpose Transistors(NPN Silicon)
BC846AWT1/D	ETC	获取价格	General Purpose Transistor NPN
BC846AWT1G	ONSEMI	获取价格	General Purpose Transistor NPN
BC846AW-TP	MCC	获取价格	NPN General Purpose Transistors

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