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BC846AWT1 PDF预览

BC846AWT1

更新时间: 2024-09-13 22:48:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
6页 210K
描述
CASE 419-02, STYLE 3 SOT-323/SC-70

BC846AWT1 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknown风险等级:5
最大集电极电流 (IC):0.1 A基于收集器的最大容量:4.5 pF
集电极-发射极最大电压:65 V配置:SINGLE
最小直流电流增益 (hFE):110JESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
功耗环境最大值:0.15 W最大功率耗散 (Abs):0.0024 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:0.6 V
Base Number Matches:1

BC846AWT1 数据手册

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Order this document  
by BC846AWT1/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
3
These transistors are designed for general purpose amplifier  
applications. They are housed in the SOT–323/SC–70 which is  
designed for low power surface mount applications.  
1
BASE  
2
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol BC846 BC847 BC848  
Unit  
V
3
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Collector Current — Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
V
V
V
65  
80  
45  
50  
30  
30  
CEO  
CBO  
EBO  
V
1
2
6.0  
100  
6.0  
100  
5.0  
100  
V
CASE 419–02, STYLE 3  
SOT–323/SC–70  
I
C
mAdc  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board, (1)  
= 25°C  
P
D
150  
mW  
T
A
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
833  
2.4  
°C/W  
mW/°C  
°C  
JA  
D
P
Junction and Storage Temperature  
DEVICE MARKING  
T , T  
J stg  
55 to +150  
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;  
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
(I = 10 mA)  
C
BC846 Series  
BC847 Series  
BC848 Series  
V
65  
45  
30  
V
(BR)CEO  
CollectorEmitter Breakdown Voltage  
BC846 Series  
BC847 Series  
BC848 Series  
V
80  
50  
30  
V
V
V
(BR)CES  
(BR)CBO  
(BR)EBO  
(I = 10 µA, V  
C EB  
= 0)  
CollectorBase Breakdown Voltage  
(I = 10 A)  
C
BC846 Series  
BC847 Series  
BC848 Series  
V
V
80  
50  
30  
EmitterBase Breakdown Voltage  
(I = 1.0 A)  
E
BC846 Series  
BC847 Series  
BC848 Series  
6.0  
6.0  
5.0  
Collector Cutoff Current (V  
= 30 V)  
= 30 V, T = 150°C)  
I
15  
5.0  
nA  
µA  
CB  
CB  
CBO  
(V  
A
1. FR–5 = 1.0 x 0.75 x 0.062 in  
Thermal Clad is a trademark of the Bergquist Company.  
Motorola, Inc. 1996

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