Datasheet > BC846AWT1

BC846AWT1

更新时间： 2024-09-13 22:48:15

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
4页	183K
描述
General Purpose Transistors(NPN Silicon)

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数据手册

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BC846AWT1 数据手册

LESHAN RADIO COMPANY, LTD.

GeneralPurposeTransistors

NPN Silicon

BC846AWT1,BWT1

BC847AWT1,BWT1

CWT1

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–323/SC–70 which is

designed for low power surface mount applications.

COLLECTOR

BC848AWT1,BWT1

CWT1

BASE

EMITTER

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

BC846

BC847

BC848

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

CASE 419–02, STYLE 3

SOT–323 /SC–70

6.0

5.0

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P _D

150

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R _θJA

P _D

833

2.4

°C/W

mW/°C

°C

Junction and Storage Temperature

T _J, T _stg

–55 to +150

DEVICE MARKING

BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;

BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I_C= 10 mA)

BC846 Series

BC847 Series

BC848 Series

BC846 Series

BC847 Series

BC848 Series

BC846 Series

BC847 Series

BC848 Series

BC846 Series

BC847 Series,

BC848 Series

6.0

5.0

—

5.0

V _(BR)CEO

V _(BR)CES

V _(BR)CBO

Collector–Emitter Breakdown Voltage

(I_C= 10 µA, V_EB= 0)

Collector–Base Breakdown Voltage

(I_C= 10 µA)

Emitter–Base Breakdown Voltage

(I_E= 1.0 µA)

V _(BR)EBO

Collector Cutoff Current (V_CB= 30 V)

I _CBO

(V_CB= 30 V, T_A= 150°C)

—

µA

1.FR–5=1.0 x 0.75 x 0.062in

K4–1/4

12 3 4

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