Datasheet > BAW56LT1/D

BAW56LT1/D

更新时间： 2024-11-08 23:34:31

品牌	Logo	应用领域
其他 - ETC		二极管开关
页数	文件大小	规格书
4页	52K
描述
Monolithic Dual Common Anode Switching Diode

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BAW56LT1/D 数据手册

ON Semiconductort

Monolithic Dual Switching Diode

Common Anode

BAW56LT1

ON Semiconductor Preferred Device

MAXIMUM RATINGS (EACH DIODE)

Rating

Symbol

Value

Unit

Vdc

Reverse Voltage

Forward Current

200

500

mAdc

Peak Forward Surge Current

THERMAL CHARACTERISTICS

Characteristic

FM(surge)

CASE 318–08, STYLE 12

SOT–23 (TO–236AB)

Symbol

Max

Unit

(1)

Total Device Dissipation FR–5 Board

225

T = 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

CATHODE

Total Device Dissipation

ANODE

(2)

Alumina Substrate, T = 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

CATHODE

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

T , T

–55 to +150

stg

BAW56LT1 = A1

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(BR)

—

Vdc

(BR)

= 100 µAdc)

Reverse Voltage Leakage Current

(V = 25 Vdc, T = 150°C)

µAdc

—

2.5

(V = 70 Vdc)

(V = 70 Vdc, T = 150°C)

Diode Capacitance

(V = 0, f = 1.0 MHz)

—

2.0

Forward Voltage

mVdc

(I = 1.0 mAdc)

—

715

855

1000

1250

(I = 10 mAdc)

(I = 50 mAdc)

(I = 150 mAdc)

Reverse Recovery Time

—

6.0

(I = I = 10 mAdc, I

= 1.0 mAdc) (Figure 1) R = 100 Ω

R(REC)

1. FR–5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 1

BAW56LT1/D

12 3 4

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