BAW56LT1D

更新时间： 2024-11-09 06:41:31

品牌	Logo	应用领域
安森美 - ONSEMI		二极管开关
页数	文件大小	规格书
4页	120K
描述
Dual Switching Diode Common Anode

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BAW56LT1D 数据手册

BAW56LT1G

Dual Switching Diode

Common Anode

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

http://onsemi.com

Compliant

MAXIMUM RATINGS (EACH DIODE)

CATHODE

Rating

Reverse Voltage

Symbol

Value

Unit

ANODE

Forward Current

200

500

CATHODE

Peak Forward Surge Current

FM(surge)

Non−Repetitive Peak Forward Current

t = 1 ms (Note 3)

FSM

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

SOT−23 (TO−236)

CASE 318

Total Device Dissipation FR−5 Board

(Note 1)

225

STYLE 12

= 25°C

1.8

mW/°C

°C/W

Derate above 25°C

MARKING DIAGRAM

Thermal Resistance,

556

Junction−to−Ambient

A1 M G

Total Device Dissipation

Alumina Substrate,

300

2.4

mW/°C

(Note 2) T = 25°C

Derate above 25°C

= Device Code

= Date Code*

= Pb−Free Package

Thermal Resistance,

Junction−to−Ambient

417

°C/W

°C

Junction and Storage Temperature

T , T

−55 to

+150

stg

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

ORDERING INFORMATION

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.

3. Square Wave; T = 25°C.

†

Device

Package

Shipping

BAW56LT1G

SOT−23

3000 / Tape & Reel

(Pb−Free)

BAW56LT3G

SOT−23

10,000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2009

Publication Order Number:

August, 2009 − Rev. 6

BAW56LT1/D

12 3 4

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