Datasheet > BAW56M

BAW56M

更新时间： 2024-09-17 11:13:47

品牌	Logo	应用领域
安世 - NEXPERIA		二极管
页数	文件大小	规格书
10页	205K
描述
High-speed switching diodeProduction

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BAW56M 数据手册

BAW56M

High-speed switching diode

28 October 2022

Product data sheet

1. General description

High-speed switching diode, encapsulated in a ultra small SOT883 (SC-101) Surface-Mounted

Device (SMD) plastic package.

2. Features and benefits

•

High switching speed: t_rr≤ 4 ns

•

Low capacitance: C_d≤ 2 pF

Low leakage current

Reverse voltage: V_R≤ 90 V

Ultra small SMD plastic packages

AEC-Q101 qualified

3. Applications

•

High-speed switching

General-purpose switching

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

I_R

reverse current

reverse voltage

V_R= 80 V; T_amb= 25 °C

0.5

µA

V_R

t_rr

reverse recovery time I_F= 10 mA; I_R= 10 mA; R_L= 100 Ω;

I_R(meas)= 1 mA; T_amb= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

Simplified outline

Graphic symbol

cathode (diode 1)

cathode (diode 2)

common anode

006aab099

Transparent

top view

DFN1006-3 (SOT883)

12 3 4 5 6 7...10

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