Datasheet > BAW56S

BAW56S

更新时间： 2024-09-16 06:41:31

品牌	Logo	应用领域
科信 - KEXIN		二极管测试光电二极管
页数	文件大小	规格书
2页	42K
描述
High-Speed Double Diode Array

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数据手册

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BAW56S 数据手册

SMD Type

Diodes

High-Speed Double Diode Array

BAW56S

SOT-363

Unit: mm

+0.1

1.3

-0.1

0.65

Features

Small plastic SMD package

High switching speed: max. 4 ns

Continuous reverse voltage:max. 75 V

Repetitive peak reverse voltage:max. 85 V

Repetitive peak forward current:max. 450 mA.

+0.05

0.1

-0.02

+0.1

0.3

-0.1

+0.1

-0.1

2.1

Absolute Maximum Ratings Ta = 25

Parameter

Per diode

Symbol

Conditions

Min

Max

Unit

repetitive peak forward current

continuous reverse voltage

V^RRM

V^R

single diode loaded;

all diodes loaded;

250

100

450

continuous forward current

I^F

repetitive peak forward current

I^FRM

square wave; T^j= 25 prior to surge;

t = 1

non-repetitive peak forward current

IFSM

t = 1 ms

t = 1 s

0.5

total power dissipation

P^tot

T^stg

350

+150

255

Ts = 60 ; note 1

storage temperature

-65

junction temperature

thermal resistance from junction to ambient

Rth j-a

K/W

Note

1. One or more diodes loaded.

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