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BAW56T PDF预览

BAW56T

更新时间: 2024-11-19 12:21:23
品牌 Logo 应用领域
鲁光 - LGE 二极管开关光电二极管
页数 文件大小 规格书
2页 223K
描述
Switching Diode

BAW56T 技术参数

Case Style:SOT-523IF(mA):75
Maximum recurrent peak reverse voltage:85TRR(nS):4.0
Maximum instantaneous forward voltage:1.25@IF(uA):0.15
Maximum reverse current:2.0@VR:75
class:Diodes

BAW56T 数据手册

 浏览型号BAW56T的Datasheet PDF文件第2页 
BAW56T/BAV70T/BAV99T  
Switching Diode  
SOT-523  
Features  
—
—
—
Fast Switching Speed  
For General Purpose Switching Applications  
High Conductance  
Dimensions in inches and (millimeters)  
BAW56T Marking: JD  
BAV70T Marking: JJ  
BAV99T Marking: JE  
Maximum Ratings @TA=25  
Parameter  
Symbol  
VR  
Limits  
Unit  
Reverse voltage  
85  
75  
V
Forward current  
IO  
mA  
Forward power dissipation  
Junction temperature  
Storage temperature  
PD  
Tj  
150  
150  
mW  
Tstg  
-65~150  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)  
IR1  
Test  
conditions  
MIN  
MAX  
UNIT  
V
Reverse breakdown voltage  
IR= 1μA  
VR=75V  
VR=25V  
85  
2
μA  
Reverse voltage leakage current  
Forward voltage  
IR2  
0.03  
μA  
IF=1mA  
IF=10mA  
IF=50mA  
715  
855  
1000  
1250  
VF  
mV  
IF=150mA  
Diode capacitance  
CD  
t r r  
VR=0 f=1MHz  
IF=IR=10mA  
1.5  
4
pF  
nS  
Reverse recovery time  
Irr=0.1×IR,RL=100Ω  
http://www.luguang.cn  
mail:lge@luguang.cn  

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