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BAW56M3T5G

更新时间: 2024-11-19 06:41:31
品牌 Logo 应用领域
安森美 - ONSEMI 二极管开关
页数 文件大小 规格书
4页 116K
描述
Dual Switching Diode Common Anode

BAW56M3T5G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT包装说明:SOT-723, CASE 631AA-01, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:2 weeks风险等级:1.48
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.715 V
JESD-30 代码:R-PDSO-F3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:0.5 A
元件数量:2端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.265 W
认证状态:Not Qualified最大重复峰值反向电压:75 V
最大反向恢复时间:0.006 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAW56M3T5G 数据手册

 浏览型号BAW56M3T5G的Datasheet PDF文件第2页浏览型号BAW56M3T5G的Datasheet PDF文件第3页浏览型号BAW56M3T5G的Datasheet PDF文件第4页 
BAW56M3T5G  
Dual Switching Diode  
Common Anode  
The BAW56M3T5G device is a spinoff of our popular SOT23  
threeleaded device. It is designed for switching applications and is  
housed in the SOT723 surface mount package. This device is ideal  
for lowpower surface mount applications where board space is at a  
premium.  
http://onsemi.com  
70 V  
Features  
DUAL COMMON ANODE  
SWITCHING DIODE  
Reduces Board Space  
This is a HalideFree Device  
This is a PbFree Device  
CATHODE  
1
MAXIMUM RATINGS (EACH DIODE)  
ANODE  
3
Rating  
Symbol  
Value  
75  
Unit  
Vdc  
2
Reverse Voltage  
Forward Current  
V
R
CATHODE  
I
F
200  
500  
mAdc  
mAdc  
Peak Forward Surge Current  
THERMAL CHARACTERISTICS  
Characteristic  
I
FM(surge)  
MARKING  
DIAGRAM  
3
Symbol  
Max  
Unit  
SOT723  
CASE 631AA  
STYLE 4  
Total Device Dissipation  
FR5 Board (Note 1)  
P
D
mW  
AN M  
1
265  
2.1  
2
mW/°C  
T = 25°C  
A
1
Derate above 25°C  
AN = Specific Device Code  
= Date Code  
Thermal Resistance,  
JunctiontoAmbient  
R
q
JA  
470  
°C/W  
M
Total Device Dissipation  
Alumina Substrate, (Note 2) T = 25°C  
Derate above 25°C  
P
640  
5.1  
mW  
mW/°C  
°C/W  
D
ORDERING INFORMATION  
A
Device  
Package  
Shipping  
Thermal Resistance,  
R
q
195  
JA  
JunctiontoAmbient  
BAW56M3T5G  
SOT723 8000/Tape & Reel  
(PbFree)  
Junction and Storage Temperature  
T , T  
55 to  
+150  
°C  
J
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
©
Semiconductor Components Industries, LLC, 2009  
Publication Order Number:  
1
January, 2009 Rev. 0  
BAW56M3/D  
 

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