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BAV23A PDF预览

BAV23A

更新时间: 2024-11-19 11:15:43
品牌 Logo 应用领域
安世 - NEXPERIA PC二极管
页数 文件大小 规格书
9页 659K
描述
Dual high-voltage switching diodesProduction

BAV23A 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.55
Is Samacsys:N配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.225 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.25 W
参考标准:IEC-60134最大重复峰值反向电压:250 V
最大反向恢复时间:0.05 µs表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BAV23A 数据手册

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BAV23A  
Dual high-voltage switching diodes  
1 April 2023  
Product data sheet  
1. General description  
Dual high-voltage switching diodes, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted  
Device (SMD) plastic package.  
2. Features and benefits  
High switching speed: trr ≤ 50 ns  
Low leakage current  
Repetitive peak reverse voltage: VRRM ≤ 250 V  
Low capacitance: Cd ≤ 2 pF  
Small SMD plastic package  
3. Applications  
High-speed switching at high voltage  
High-voltage general-purpose switching  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per diode  
IR  
reverse current  
reverse voltage  
VR = 200 V  
-
-
-
-
-
-
100  
200  
50  
nA  
V
VR  
trr  
reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;  
RL = 100 Ω; Tamb = 25 °C  
ns  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
K1  
Description  
Simplified outline  
Graphic symbol  
cathode (diode 1)  
cathode (diode 2)  
common anode  
CA  
3
2
K2  
3
CA  
1
2
K1  
K2  
SOT23  
006aab099  
 
 
 
 
 

BAV23A 替代型号

型号 品牌 替代类型 描述 数据表
BAV23A-TP MCC

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Rectifier Diode, 2 Element, 0.225A, 200V V(RRM), Silicon, LEAD FREE, PLASTIC PACKSGE-3

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