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BAV103_10 PDF预览

BAV103_10

更新时间: 2024-09-16 12:51:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
3页 100K
描述
High Voltage, General Purpose Diode

BAV103_10 数据手册

 浏览型号BAV103_10的Datasheet PDF文件第2页浏览型号BAV103_10的Datasheet PDF文件第3页 
November 2010  
BAV103  
High Voltage, General Purpose Diode  
General Description  
A General Purpose diode that couples high forward  
conductance fast switching speed and high blocking  
voltages in a glass leadless LL-34 Surface Mount  
package.  
GREEN  
ORANGE  
Placement of the Expansion Gap has no relationship to  
the location of the Cathode Terminal which is indicated  
Expansion Gap  
by the first color band.  
Absolute Maximum Ratings * TA=25°C unless otherwise noted  
Symbol  
TSTG  
TJ  
Parameter  
Value  
Units  
°C  
Storage Temperature  
-65 to +200  
-65 to +200  
Operating Junction Temperature  
°C  
PD  
Total Power Dissipation at TA = 25°C  
Linear Derating Factor from TA = 25°C  
500  
3.33  
mW  
mW/°C  
RθJA  
Wiv  
IO  
Thermal Resistance Junction-to-Ambient  
Working Inverse Voltage  
350  
200  
200  
500  
600  
°C/W  
V
Average Rectified Current  
mA  
mA  
mA  
IF  
DC Forward Current (IF)  
if  
Recurrent Peak Forward Current  
iF(surge)  
Peak Forward Surge Current (IFSM)  
Pulse Width = 1.0 second  
Pulse Width = 1.0 microsecond  
1.0  
4.0  
Amp  
Amp  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Electrical Characteristics TA=25°C unless otherwise noted  
Symbol  
Parameter  
Breakdown Voltage  
Reverse Leakage  
Test Conditions  
IR = 100μA  
Min.  
Max.  
Units  
BV  
IR  
250  
V
VR = 200V  
VR = 200V, TA = 150°C  
100  
100  
nA  
μA  
VF  
Forward Voltage  
IF = 100mA  
IF = 200mA  
1.00  
1.25  
V
V
CT  
Capacitance  
VR = 0, f = 1.0MHz  
5.0  
50  
pF  
ns  
TRR  
Reverse Recovery Time  
IF = IR = 30mA, IRR = 1.0mA,  
RL = 100Ω  
© 2010 Fairchild Semiconductor Corporation  
BAV103 Rev. E1  
www.fairchildsemi.com  
1

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For surface mounted applications