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BAV116-7-F PDF预览

BAV116-7-F

更新时间: 2024-09-16 13:05:51
品牌 Logo 应用领域
美台 - DIODES 整流二极管
页数 文件大小 规格书
2页 73K
描述
Rectifier Diode,

BAV116-7-F 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.76Base Number Matches:1

BAV116-7-F 数据手册

 浏览型号BAV116-7-F的Datasheet PDF文件第2页 
BAV116W  
SURFACE MOUNT LOW LEAKAGE DIODE  
Features  
·
Surface Mount Package Ideally Suited for  
Automatic Insertion  
SOD-123  
·
Very Low Leakage Current  
Dim  
A
Min  
3.55  
2.55  
1.40  
Max  
3.85  
2.85  
1.70  
1.35  
Mechanical Data  
B
H
D
J
·
·
Case: SOD-123, Molded Plastic  
Case material - UL Flammability Rating  
Classification 94V-0  
C
G
D
a
·
·
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202, Method  
208  
E
0.55 Typical  
0.25  
0.11 Typical  
A
B
G
H
E
·
·
Polarity: Cathode Band  
Marking: Date Code and Type Code, See Page 2  
Type Code: 50  
C
J
0.10  
a
0°  
8°  
All Dimensions in mm  
·
Weight: 0.01 grams (approx.)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
BAV116W  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
130  
VR(RMS)  
IFM  
RMS Reverse Voltage  
90  
V
Forward Continuous Current  
Repetitive Peak Forward Current  
215  
500  
mA  
mA  
IFRM  
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms  
4.0  
1.0  
0.5  
IFSM  
A
@ t = 1.0ms  
@ t = 1.0s  
Pd  
Power Dissipation (Note 2)  
250  
500  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance Junction to Ambient Air (Note 2)  
Operating and Storage Temperature Range  
Tj , TSTG  
-65 to +150  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
130  
130  
¾
¾
¾
¾
V
IR = 100mA  
R = 100mA, Tj =125°C  
V(BR)R  
Reverse Breakdown Voltage (Note 1)  
I
IF = 1.0mA, Tj = 25°C  
IF = 10mA, Tj = 25°C  
IF = 50mA, Tj = 25°C  
IF = 150mA, Tj = 25°C  
IF = 10mA, Tj = 125°  
0.90  
1.0  
VFM  
Forward Voltage (Note 1)  
¾
¾
1.1  
V
1.25  
1.0  
V
R = 75V, Tj = 25°C  
5.0  
80  
nA  
nA  
IRM  
CT  
trr  
Leakage Current (Note 1)  
Total Capacitance  
¾
¾
¾
¾
2.4  
¾
VR = 75V, Tj = 125°C  
VR = 0, f = 1.0MHz  
5
pF  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100W  
Reverse Recovery Time  
3.0  
ms  
Notes:  
1. Short duration pulse to minimize self-heating effect.  
2. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website  
at http://www.diodes.com/datasheets/ap02001.pdf.  
DS30291 Rev. 2 - 2  
1 of 2  
BAV116W  

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