BAV105

更新时间： 2024-09-16 06:41:31

品牌	Logo	应用领域
SYNSEMI		整流二极管开关
页数	文件大小	规格书
2页	27K
描述
HIGH SPEED SWITCHING DIODE

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BAV105 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.74	Is Samacsys：	N
Base Number Matches：	1

BAV105 数据手册

HIGH SPEED SWITCHING DIODE

MiniMELF (SOD-80C)

BAV105

Cathode Mark

FEATURES :

• High switching speed: max. 6 ns

• General application

• Continuous reverse voltage: max. 60 V

• Repetitive peak reverse voltage: max. 60 V

• Repetitive peak forward current: max. 600 mA.

• Pb / RoHS Free

f 0.063 (1.64)

0.055 (1.40)

0.019(0.48)

0.011(0.28)

0.142(3.6)

0.134(3.4)

Mounting Pad Layout

0.098 (2.50)

Max.

0.049 (1.25)Min.

MECHANICAL DATA :

Case: MiniMELF Glass Case (SOD-80)

Weight: approx. 0.05g

0.079 (2.00)Min.

0.197 (5.00)

REF

Dimensions in inches and ( millimeters )

Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)

Parameter

Symbol

Value

Unit

Maximum Repetitive Peak Reverse Voltage

Maximum Continuous Reverse Voltage

Maximum Continuous Forward Current

Maximum Repetitive Peak Forward Current

Maximum Surge Forward Current at t < 1s , Tj = 25°C

Maximum Power Dissipation

V_RM

V_R

I_F

300

I_FRM

I_FSM

P_D

T_J

600

0.5

500

°C

Maximum Junction Temperature

200

T_S

Storage Temperature Range

-65 to + 200

°C

Electrical Characteristics (T_J= 25°C unless otherwise noted)

Test Condition

Min.

Typ.

Max.

100

0.75

1.00

1.25

2.5

Unit

Parameter

Symbol

V_R= 60 V

I_R

Reverse Current

V_R= 60 V , Tj = 150 °C

I_F= 100 mA

V_F

I_F= 200 mA

Forward Voltage

I_F= 500 mA

f = 1MHz ; V_R= 0

Diode Capacitance

Trr

I_F= 400 mA to I_R= 400mA

R_L= 100W ; measured

at I_R= 40 mA

Reverse Recovery Time

6.0

Page 1 of 2

Rev. 02 : March 25, 2005

中文翻译

下载PDF

与BAV105相关器件

型号	品牌	获取价格	描述	数据表
BAV105/T3	NXP	获取价格	DIODE 0.3 A, 60 V, SILICON, SIGNAL DIODE, Signal Diode
BAV105112	NXP	获取价格	DIODE 60 V, SILICON, SIGNAL DIODE, Signal Diode
BAV105115	NXP	获取价格	DIODE 60 V, SILICON, SIGNAL DIODE, Signal Diode
BAV105135	NXP	获取价格	DIODE 60 V, SILICON, SIGNAL DIODE, Signal Diode
BAV105-T	NXP	获取价格	DIODE 0.3 A, 60 V, SILICON, SIGNAL DIODE, Signal Diode
BAV105T/R	PHILIPS	获取价格	Rectifier Diode, 1 Element, 0.3A, 60V V(RRM),
BAV105T/R	NXP	获取价格	DIODE 0.3 A, 60 V, SILICON, SIGNAL DIODE, Signal Diode
BAV105TRL	YAGEO	获取价格	Rectifier Diode, 1 Element, 0.6A, Silicon
BAV105TRL13	YAGEO	获取价格	Rectifier Diode, 1 Element, 0.6A, Silicon
BAV10AMO	NXP	获取价格	DIODE 0.3 A, 60 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode