Datasheet > BAS521-Q

BAS521-Q

更新时间： 2024-11-19 11:15:07

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安世 - NEXPERIA		/
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描述
High-voltage switching diodeProduction

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BAS521-Q 数据手册

BAS521-Q

High-voltage switching diode

15 June 2022

Product data sheet

1. General description

High-voltage switching diode, encapsulated in an ultra small SOD523 (SC-79) flat lead Surface-

Mounted Device (SMD) plastic package.

2. Features and benefits

•

High switching speed: t_rr≤ 50 ns

•

High reverse voltage: V_R≤ 300 V

Repetitive peak forward current: I_FRM≤ 1 A

Ultra small SMD plastic package

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

High-speed switching

High-voltage switching

4. Quick reference data

Table 1. Quick reference data

Symbol

I_F

Parameter

Conditions

Min

Typ

Max

250

300

Unit

forward current

T_sp≤ 90 °C

[1]

V_RRM

repetitive peak reverse T_j= 25 °C

voltage

V_R

V_F

reverse voltage

300

1.1

forward voltage

I_F= 100 mA; t_p= 300 µs; δ = 0.02;

0.95

pulsed; T_amb= 25 °C

I_R

t_rr

reverse current

V_R= 250 V; T_amb= 25 °C

150

reverse recovery time I_F= 30 mA; I_R= 30 mA; R_L= 100 Ω;

I_R(meas)= 3 mA; T_amb= 25 °C

[1] T_spis the solder point temperature at the soldering point of the cathode tab.

5. Pinning information

Table 2. Pinning information

Symbol

Description

cathode

Simplified outline

Graphic symbol

anode

aaa-028035

SC-79 (SOD523)

12 3 4 5 6 7...9

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