Datasheet > BAS321J-Q

BAS321J-Q

更新时间： 2024-11-02 15:19:43

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
9页	202K
描述
High-voltage switching diodeProduction

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BAS321J-Q 数据手册

BAS321J-Q

High-voltage switching diode

27 June 2023

Product data sheet

1. General description

High-voltage switching diode in a very small SOD323F (SC-90) flat lead Surface-Mounted Device

(SMD) plastic package.

2. Features and benefits

•

High switching speed: t_rr≤ 50 ns

•

Low leakage current: I_R≤ 100 nA

High reverse voltage V_R≤ 200 V

Low capacitance: C_d≤ 2 pF

Very small SMD plastic package

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

High-speed switching

General-purpose switching

Voltage clamping

Reverse polarity protection

4. Quick reference data

Table 1. Quick reference data

Symbol

I_F

Parameter

Conditions

Min

Typ

Max

250

200

250

Unit

forward current

reverse voltage

[1]

V_R

V_RRM

repetitive peak reverse

voltage

V_F

forward voltage

I_F= 200 mA; t_p≤ 300 µs; δ ≤ 0.02;

T_j= 25 °C

1.25

I_R

t_rr

reverse current

V_R= 200 V; pulsed; T_j= 25 °C

100

reverse recovery time I_F= 30 mA; I_R= 30 mA; R_L= 100 Ω;

I_R(meas)= 3 mA; T_j= 25 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

12 3 4 5 6 7...9

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