Datasheet > BAS32L

BAS32L

更新时间： 2024-06-27 12:12:35

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描述
High-Speed Diodes

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中文翻译

获取价格

数据手册

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BAS32L 数据手册

SMD Type

Diodes

High-speed diode

BAS32L

LL-34

Unit: mm

Features

Small hermetically sealed glass SMD package

High switching speed: max. 4 ns

2.64REF

1.50

1.30

0.50

0.35

Continuous reverse voltage:max. 75 V

Repetitive peak reverse voltage:max. 75 V

Repetitive peak forward current:max. 450 mA.

3.60

3.30

Absolute Maximum Ratings Ta = 25

Parameter

continuous reverse voltage

Symbol

V^R

Rating

Unit

200

continuous forward current

I^F

repetitive peak forward current

I^FRM

450

non-repetitive peak forward current t = 1

IFSM

t = 1 ms

t = 1 s

0.5

total power dissipation

P^D

R^{th j-tp}

R^{th j-a}

T^j

500

K/W

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

junction temperature

300

350

200

storage temperature

Tstg

-65 to +200

Electrical Characteristics Ta = 25

Parameter

Symbol

V^F

Testconditons

Min.

620

Max

750

1000

930

Unit

IF = 5 mA

I^F=100 mA

forward voltage

reverse current

I^F=100 mA;TJ=100

V^R= 20 V

V^R= 75 V

I^R

V^R= 20 V; Tj = 150

V^R= 75 V; Tj = 150

100

reverse breakdown voltage

diode capacitance

V^(BR)R

C^d

100

IR = 100

f = 1 MHz; VR =0V

when switched from IF = 10 mA to IR = 10 mA;

R^L= 100 ;measured at IR = 1 mA

reverse recovery time

t^rr

forward recovery voltage

V^fr

when switched from IF = 50 mA;tr = 20 ns;

2.5

* Pulsed test: t^p= 300 ìs; ä = 0.02.

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