Datasheet > BAS32L_08

BAS32L_08

更新时间： 2024-02-26 09:52:06

品牌	Logo	应用领域
恩智浦 - NXP		二极管开关
页数	文件大小	规格书
10页	63K
描述
High-speed switching diode

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BAS32L_08 数据手册

BAS32L

High-speed switching diode

Rev. 06 — 29 October 2008

Product data sheet

1. Product proﬁle

1.1 General description

Single high-speed switching diode, fabricated in planar technology, and encapsulated in a

small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.

1.2 Features

I High switching speed: t_rr≤ 4 ns

I Reverse voltage: V_R≤ 75 V

I Repetitive peak reverse voltage: V_RRM≤ 100 V

I Repetitive peak forward current: I_FRM≤ 450 mA

I Small hermetically sealed glass SMD package

1.3 Applications

I High-speed switching

I Reverse polarity protection

1.4 Quick reference data

Table 1.

Symbol

I_F

Quick reference data

Parameter

Conditions

Min

Typ

Max

200

450

Unit

[1]

forward current

I_FRM

repetitive peak forward

current

V_R

V_F

t_rr

reverse voltage

forward voltage

I_F= 100 mA

1000

[2]

reverse recovery time

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] When switched from I_F= 10 mA to I_R= 10 mA; R_L= 100 Ω; measured at I_R= 1 mA.

12 3 4 5 6 7...10

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