5秒后页面跳转
BAS32L-T PDF预览

BAS32L-T

更新时间: 2024-02-03 23:50:58
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
11页 114K
描述
0.2A, 100V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2

BAS32L-T 技术参数

生命周期:Transferred包装说明:HERMETIC SEALED, GLASS PACKAGE-2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.21外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:O-LELF-R2最大非重复峰值正向电流:2 A
元件数量:1端子数量:2
最高工作温度:200 °C最大输出电流:0.2 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.5 W
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向电流:5 µA最大反向恢复时间:0.004 µs
表面贴装:YES端子形式:WRAP AROUND
端子位置:ENDBase Number Matches:1

BAS32L-T 数据手册

 浏览型号BAS32L-T的Datasheet PDF文件第2页浏览型号BAS32L-T的Datasheet PDF文件第3页浏览型号BAS32L-T的Datasheet PDF文件第4页浏览型号BAS32L-T的Datasheet PDF文件第5页浏览型号BAS32L-T的Datasheet PDF文件第6页浏览型号BAS32L-T的Datasheet PDF文件第7页 
BAS32L  
High-speed switching diode  
Rev. 7 — 20 January 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a  
small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.  
1.2 Features and benefits  
„ High switching speed: trr 4 ns  
„ Reverse voltage: VR 75 V  
„ Repetitive peak reverse voltage: VRRM 100 V  
„ Repetitive peak forward current: IFRM 450 mA  
„ Small hermetically sealed glass SMD package  
1.3 Applications  
„ High-speed switching  
„ Reverse polarity protection  
1.4 Quick reference data  
Table 1.  
Symbol  
IF  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
200  
450  
Unit  
mA  
mA  
[1]  
forward current  
-
-
-
-
IFRM  
repetitive peak forward  
current  
VR  
VF  
trr  
reverse voltage  
-
-
-
-
-
-
75  
V
forward voltage  
IF = 100 mA  
1000  
4
mV  
ns  
[2]  
reverse recovery time  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.  

与BAS32L-T相关器件

型号 品牌 获取价格 描述 数据表
BAS32LT/R NXP

获取价格

DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
BAS32LTRL YAGEO

获取价格

Rectifier Diode, 1 Element, 0.2A, Silicon
BAS32LTRL13 YAGEO

获取价格

Rectifier Diode, 1 Element, 0.2A, Silicon
BAS33 VISHAY

获取价格

Silicon Planar Diodes
BAS33, BAS34 VISHAY

获取价格

Small Signal Switching Diodes
BAS33_08 VISHAY

获取价格

Small Signal Switching Diodes
BAS33_12 VISHAY

获取价格

Small Signal Switching Diodes
BAS33-TAP VISHAY

获取价格

Small Signal Switching Diodes
BAS33-TR VISHAY

获取价格

Small Signal Switching Diodes
BAS34 VISHAY

获取价格

Silicon Planar Diodes