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BAS32L,135 PDF预览

BAS32L,135

更新时间: 2024-01-26 11:35:28
品牌 Logo 应用领域
其他 - ETC 二极管
页数 文件大小 规格书
11页 720K
描述
DIODE GEN PURP 75V 200MA SOD80

BAS32L,135 技术参数

生命周期:Active零件包装代码:MELF
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:0.8外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-LELF-R2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:200 °C最低工作温度:-65 °C
最大输出电流:0.2 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260最大功率耗散:0.5 W
参考标准:IEC-60134最大重复峰值反向电压:100 V
最大反向恢复时间:0.004 µs表面贴装:YES
端子面层:Tin (Sn)端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:30
Base Number Matches:1

BAS32L,135 数据手册

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BAS32L  
High-speed switching diode  
Rev. 7 — 20 January 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a  
small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.  
1.2 Features and benefits  
„ High switching speed: trr 4 ns  
„ Reverse voltage: VR 75 V  
„ Repetitive peak reverse voltage: VRRM 100 V  
„ Repetitive peak forward current: IFRM 450 mA  
„ Small hermetically sealed glass SMD package  
1.3 Applications  
„ High-speed switching  
„ Reverse polarity protection  
1.4 Quick reference data  
Table 1.  
Symbol  
IF  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
200  
450  
Unit  
mA  
mA  
[1]  
forward current  
-
-
-
-
IFRM  
repetitive peak forward  
current  
VR  
VF  
trr  
reverse voltage  
-
-
-
-
-
-
75  
V
forward voltage  
IF = 100 mA  
1000  
4
mV  
ns  
[2]  
reverse recovery time  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.  

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