Datasheet > BAS116LT1

BAS116LT1

更新时间： 2024-09-27 12:47:27

品牌	Logo	应用领域
永而佳 - WINNERJOIN		二极管开关光电二极管
页数	文件大小	规格书
1页	57K
描述
SURFACE MOUNT SWITCHING DIODE

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中文翻译

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数据手册

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BAS116LT1 数据手册

RoHS

BAS116LT1

S URFACE MOUNT S WITCHING DIODE

• Low Leakage Current Applications

• Medium Speed Switching Times

Package:SOT-23

ABSOLUTE MAXIMUM RATINGS at Ta=25

Characteristic

Non-Repetitive Peak Reverse

Voltage

Symbol

Rating

Unit

V_RM

100

Peak Repetitive Reverse Voltage

working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

Peak Forward Current

I_F

200

300

mAdc

Forward

Continuous

(Note)

I_FM

Current(Note)

Power

Dissipation

P_D

300

2.4

Derate Above 25

Junction Temperature

Storage Temperature

mW/

150

Tstg

-50-150

Note:Diode Ceramic Substrate 10mm 8.0mm 0.7mm

ELECTRICAL CHARACTERISTICS at Ta=25

Characteristic

Symbol Min Max

Unit Test Conditions

0.9

1.0

I_F=1.0mA

I_F=10mA

I_F=50mA

I_F=150mA

Forward Voltage

V_F

1.1

1.25

(BR)

—

Reverse Breakdown Voltage

Vdc I _BR= 100 uAdc

5.0

V_R=75V

I_R

Reverse Voltage Leakage Current

Capacitance

V_R=75V Tj=150

2.0

3.0

V_R=0 f=1.0MHz

Reverse Recovery Time

Trr

I_F=10mA to I_R=10mA

Note:Diode On Ceramic Substrate 10mm 8.0mm 0.7mm

DEVICE MARKING:

BAS116LT1=JV

WEJ ELECTRONIC CO.,LTD

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

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